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5
V
O
–10.4
V
–10
V
O
V
REG
IN
200
100
200
100
mV
mV
mV
mV
mA
mA
mA
μ
V
8
REG
L
12
4
2.5
2.5
I
bias
64
71
V
no
RR
dB
V
A
1
0.5
–10.5
5
56
–9.6
–9.5
1.1
2.1
– 0.7
typ
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Peak output current
Output voltage temperature coefficient
Parameter
Symbol
Condition
min
max
Unit
V
I
=
–12.5 to –25V,
I
O
=
5mA to 1A, P
D
*
V
I
=
–12.5 to –27V, T
j
=
25C
V
I
=
–13 to –19V, T
j
=
25C
I
O
=
5mA to 1.5A, T
j
=
25C
I
O
=
250 to 750mA, T
j
=
25C
T
j
=
25C
V
I
=
–12.5 to –27V, T
j
=
25C
I
O
=
5mA to 1A, T
j
=
25C
f
=
10Hz to 100kHz, Ta
=
25C
V
I
=
–13 to –23V, I
O
=
100mA, f
=
120Hz
I
O
=
1A, T
j
=
25C
T
j
=
25C
I
O
=
5mA, T
j
=
0 to 125C
T
j
=
25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
I
O (Peak)
V
O
/Ta
mV/C
Note 1) The specified condition T
=
25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) Unless otherwise specified, V
=
–16V, I
=
500mA, C
I
=
2
μ
F, C
O
=
1
μ
F, T
j
=
0 to 125C
* AN7900T series : 15W, AN7900F series : 10.25W
I
Electrical Characteristics
(Ta
=
25C) (continued)
AN7910T/AN7910F (–10V Type)
<
=
V
O
–12.5
V
–12
V
O
V
REG
IN
240
120
240
120
mV
mV
mV
mV
mA
mA
mA
μ
V
10
3
REG
L
12
4
2.5
I
bias
75
70
V
no
RR
dB
V
A
1
0.5
–12.6
5
55
–11.5
–11.4
1.1
2.1
– 0.8
typ
Output voltage
Output voltage tolerance
Line regulation
Load regulation
Bias current
Input bias fluctuation
Load bias current fluctuation
Output noise voltage
Ripple rejection ratio
Minimum input/output voltage difference
Peak output current
Output voltage temperature coefficient
Parameter
Symbol
Condition
min
max
Unit
V
I
=
–14.5 to –27V,
I
O
=
5mA to 1A, P
D
*
V
I
=
–14.5 to –30V, T
j
=
25C
V
I
=
–16 to –22V, T
j
=
25C
I
O
=
5mA to 1.5A, T
j
=
25C
I
O
=
250 to 750mA, T
j
=
25C
T
j
=
25C
V
I
=
–14.5 to –30V, T
j
=
25C
I
O
=
5mA to 1A, T
j
=
25C
f
=
10Hz to 100kHz, Ta
=
25C
V
I
=
–15 to –25V, I
O
=
100mA, f
=
120Hz
I
O
=
1A, T
j
=
25C
T
j
=
25C
I
O
=
5mA, T
j
=
0 to 125C
T
j
=
25C
I
bias (IN)
I
bias (L)
V
DIF (min.)
I
O (Peak)
V
O
/Ta
mV/C
Note 1) The specified condition T
j
=
25C means that the test should be carried out with the test time so short (within 10ms) that the
drift in characteristic value due to the rise in chip junction temperature can be ignored.
Note 2) Unless otherwise specified, V
=
–19V, I
=
500mA, C
I
=
2
μ
F, C
O
=
1
μ
F, T
j
=
0 to 125C
* AN7900T series : 15W, AN7900F series : 10.25W
AN7912T/AN7912F (–12V Type)
<
=