參數(shù)資料
型號(hào)： AN2147FHP
廠商： PANASONIC CORP
元件分類： 消費(fèi)家電
英文描述： CCD Video Camera Signal Processor ICs
中文描述： SPECIALTY CONSUMER CIRCUIT, PQFP80
封裝： 12 X 12 MM, PLASTIC, QFH-80
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 108K
代理商： AN2147FHP
min
typ
max
Unit
Parameter
Condition
Symbol
Note A) Sine waves with BLK and pedestal
Note B) Sine waves with BLK
Note C) For the AN2147FHP, 450mV
P-P
min., 665mV
typ., and 880mV
P-P
max. under the conditions
V
=10STEP 200mV
and V
=10STEP 200mV
P-P
.
Note D) 90ns typ. for the AN2146FHP and the AN2147FHP
Note E) 6.0dB typ. for the AN2147FHP
The value in the above characteristics is not a guaranteed value, but reference one on design.
700
700
1150
1150
1500
1500
mV
P–P
mV
P–P
V
CGC1
V
CGC2
Color difference gain control characteristics (1)
Note B)
V
22
=Sin500kHz 600mV
P–P
V
23
=Sin500kHz 600mV
P–P
V
5
=10STEP 1V
P–P
3rd step
V
5
=10STEP 1V
P–P
5 step
V
5
=10STEP 1V
P–P
10 step
V
69
=C–GND
V
5
=C–GND
V
22
=C–GND
V
23
=C–GND
V
54
=10STEP 200mV
P–P
V
56
=10STEP 200mV
P–P
–2
0
2
dB
V
GAM4
Between channels
γ
characteristics
V
23
=10STEP 500mV
P–P
V
24
=10STEP 1V
Color difference gain control characteristics (2)
Note B)
220
300
390
mV
P–P
V
IGAM1
Iris
γ
characteristics (1)
350
480
620
mV
P–P
V
IGAM2
Iris
γ
characteristics (2)
470
630
800
mV
P–P
V
IGAM3
Iris
γ
characteristics (3)
–20
–20
–20
–20
0
0
0
0
20
20
20
20
mV
mV
mV
mV
V
YBLK
V
IBLK
V
RBLK
V
BBLK
Luminance signal blanking level
Iris signal blanking level
R-Y blanking level
B-Y blanking level
–20
–20
dB
dB
mV
dB
ns
dB
dB
dB
mV
V
EDGE1
V
EDGE2
V
HC
V
APY
V
APDL
V
APHAP
V
APVAP
V
LLSP
V
WFADE
Edge suppression characteristics (1)
Note B)
V
22
=Sin500kHz 600mV
P–P
V
23
=Sin500kHz 600mV
P–P
V
65
=10STEP 1500mV
P–P
V
16
=10STEP 300mV
P–P
V
16
=Sin3.5MHz 100mV
P–P
V
13
=Sin3.5MHz 600mV
P–P
V
11
=Sin500kHz 600mV
P–P
V
13
=Sin3.5MHz 600mV
P–P
V
16
=Vref
V
37
=Sin500kHz 500mV
P–P
(V
38
=0.5V)
V
42
=Sin500kHz 500mV
P–P
(V
41
=0.5V)
V
37
=Sin500kHz 500mV
P–P
(V
38
=3.0V)
V
42
=Sin500kHz 500mV
P–P
(V
41
=3.0V)
V
22
=V
23
=Sin500kHz 600mV
P–P
(V
5
=white)
V
22
=V
23
=Sin500kHz 600mV
P–P
V
65
=Sin3.5MHz 1500mV
P–P
V
22
=V
23
=Sin3.5MHz 600mV
P–P
V
48
=V
50
=Sin500kHz 200mV
P–P
V
48
=V
50
=Sin3.5MHz 200mV
P–P
V
54
=V
56
=Sin500kHz 500mV
P–P
310
450
610
mV
P–P
V
VAP
VAP generation circuit gain
Note C)
Edge suppression characteristics (2)
Note B)
Luminance high-cut characteristics
510
720
930
mV
P–P
V
CGAM3
Color difference
γ
characteristics (3)
V
22
=10STEP 500mV
P–P
V
24
=10STEP 1V
P–P
10 step
I
Electrical Characteristics (cont.) (VCC=4.6V, Ta=25
±
2C)
350
6.9
120
3.4
3.3
–12
515
AP mix circuit luminance amplification characteristics
Horizontal APDL group delay
Note A, D
)
Aperture mix circuit HAP gain
Note B
)
Aperture mix circuit VAP gain
Note B, E
)
Aperture suppression characteristics
Note B)
White fade characteristics
0
dB
V
DLAMP1
Delay signal amp. gain
(1)
Note A
)
0
dB
V
DLAMP2
Delay signal amp. gain
(2)
Note A
)
8
dB
V
DLAMP3
Delay signal amp. gain
(3)
Note A
)
8
dB
V
DLAMP4
Delay signal amp. gain
(4)
Note A
)
–26
dB
V
CHC
Color difference high-clip characteristics
Note B
)
–26
–30
–26
dB
dB
dB
dB
dB
dB
V
CFADE
V
SHLPF
V
CLPF
V
VLPF1
V
VLPF2
V
EHPF
Color difference fade characteristics
Note B
)
S/H LPF characteristics
Note A
)
Color difference LPF characteristics
Note B
)
VAP LPF characteristics (1)
Note A
)
VAP LPF characteristics (2)
Note A
)
Edge HPF characteristics
Note A
)
0
–25
–4
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