參數(shù)資料
型號(hào)： AN1500A
廠商： SAMES
英文描述： SINGLE CHIP TELEPHONE DEMO BOARD
中文描述： 單芯片電話演示板
文件頁(yè)數(shù)： 18/27頁(yè)
文件大?。?/td> 623K
代理商： AN1500A
AN1500A
sames
18/27
16.3 Bipolar darlington transistor
Schematic
+
-
low cost
high DC mask at low currents
may be tight to spec limits for
some PTTs
2 transistors
10k
base resistor (R4) affects
AC impedance
16.4 VMOS-FET with surge protection
(surge protection = R3 =20
may also be used with bipolar hook transistor options)
Schematic
+
-
powerless switching
low on-resistance
low DC-mask
excellent surge protection
gate resistor (R5) does not affect
AC impedance
MOS handling required
higher cost than bipolars
few vendors
Principle: the source voltage is limited to
≈
10V (D6; see schematic) in off-hook state . High voltage peaks induced
at line will generate a high positive voltage drop across R3, lifting the gate voltage over the source voltage and thus
cause the (P-channel) Transistor to shut off.
16.5 VMOS-FET with overcurrent protection
(overcurrent protection =R3,Q5 may also be used with bipolar hook transistor options)
Schematic
+
-
powerless switching
low on-resistance
lowest DC-mask
adjustable overcurrent protection
gate resistor (R5) does not affect
AC impedance
MOS handling required
higher cost than bipolars
few vendors
extra (low cost) transistor
required
Principle: the line current generates a voltage drop across R3. If this voltage drop is >0.7V, C-E of Q5 is on and
shuts Q1 off by short circuiting its Gate/Source voltage.
The shutoff current is calculated by
I
shutoff
= 0.7V / R3 ;
installed = 0.7V/3.9
= 180mA
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