WAFER TEST LIMITS (@ V S =
參數(shù)資料
型號(hào)： AMP03GSZ
廠商： Analog Devices Inc
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 0K
描述： IC AMP DIFF PREC LDIST 8SOIC
標(biāo)準(zhǔn)包裝： 98
放大器類(lèi)型： 差分
電路數(shù)： 1
轉(zhuǎn)換速率： 9.5 V/µs
-3db帶寬： 3MHz
電壓 - 輸入偏移： 25µV
電流 - 電源： 2.5mA
電流 - 輸出 / 通道： 45mA
電壓 - 電源，單路/雙路(±)： ±6 V ~ 18 V
工作溫度： -40°C ~ 85°C
安裝類(lèi)型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 8-SO
包裝： 管件
產(chǎn)品目錄頁(yè)面： 774 (CN2011-ZH PDF)
–3–
REV. F
AMP03
WAFER TEST LIMITS (@ V
S =
15 V, TA = 25 C, unless otherwise noted.)*
AMP03GBC
Parameter
Symbol
Conditions
Limit
Unit
Offset Voltage
VOS
VS =
±18 V
0.5
mV max
Gain Error
No Load, VIN =
±10 V, R
S = 0
0.008
% max
Input Voltage Range
IVR
±10
V min
Common-Mode Rejection
CMR
VCM =
±10 V
80
dB min
Power Supply Rejection Ratio
PSRR
VS =
±6 V to ±18 V
8
V/V max
Output Swing
VO
RL = 2 k
±12
V max
Short-Circuit Current Limit
ISC
Output Shorted to Ground
+45/–15
mA min
Supply Current
ISY
No Load
3.5
mA max
*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Input Voltage
2 . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage
Output Short-Circuit Duration . . . . . . . . . . . . . . Continuous
Storage Temperature Range
P, J Package . . . . . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . 300
°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150
°C
Operating Temperature Range
AMP03B . . . . . . . . . . . . . . . . . . . . . . . . . –55
°C to +125°C
AMP03F, AMP03G . . . . . . . . . . . . . . . . . . –40
°C to +85°C
Package Type
JA
3
JC
Unit
Header (J)
150
18
°C/W
8-Lead PDIP (P)
103
43
°C/W
8-Lead SOIC (S)
155
40
°C/W
NOTES
1Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2For supply voltages less than
±18 V, the absolute maximum input voltage is equal
to the supply voltage.
3
θ
JA is specified for worst-case mounting conditions, i.e.,
θ
JA is specified for device
in socket for header and PDIP packages and for device soldered to printed circuit
board for SOIC package.
ORDERING GUIDE
Temperature
Package
Model
1
Range
Description
Option
2
AMP03GP
–40
°C to +85°C8-Lead PDIP
P-8
AMP03BJ
–40
°C to +85°CHeader
H-08B
AMP03FJ
–40
°C to +85°CHeader
H-08B
AMP03BJ/883C
–55
°C to +125°CHeader
H-08B
AMP03GS
–40
°C to +85°C8-Lead SOIC
S-8
AMP03GS-REEL
–40
°C to +85°C8-Lead SOIC
S-8
5962-9563901MGA –55
°C to +125°CHeader
H-08B
AMP03GBC
Die
NOTES
1Burn-in is available on commercial and industrial temperature range parts in
PDIP and header packages.
2Consult factory for /883 data sheet.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AMP03 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
DICE CHARACTERISTICS
1. REFERENCE
2. –IN
3. +IN
4. –VEE
5. SENSE
6. OUTPUT
7. +VCC
8. NC
DIE SIZE 0.076 inch
0.076 inch, 5,776 sq. mm
(1.93 mm
1.93 mm, 3.73 sq. mm)
BURN-IN CIRCUIT
AMP03
+18V
–18V
25k
SLEW RATE TEST CIRCUIT
AMP03
+15V
–15V
0.1 F
VIN = 10V
VOUT = 10V
WARNING!
ESD SENSITIVE DEVICE
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