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參數(shù)資料
| 型號： | AMMC-6440-W10 |
| 元件分類： | 放大器 |
| 英文描述： | 37000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 0.100 X 0.069 INCH, DIE-9 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 198K |
| 代理商： | AMMC-6440-W10 |
6
Biasing and Operation
The recommended quiescent DC bias condition for op-
timum eciency, performance, and reliability is Vd=5.5
volts with Vg set for Id=950 mA. Minor improvements in
performance are possible depending on the application.
The drain bias voltage range is 3 to 5.5V. A single DC gate
supply connected to Vg will bias all gain stages. Mut-
ing can be accomplished by setting Vg and /or Vg to the
An optional output power detector network is also
provided. The dierential voltage between the Det-Ref
and Det-Out pads can be correlated with the RF power
emerging from the RF output port. The detected voltage
is given by :
V = (Vref - Vdet) - Vofs
where Vref is the voltage at the DET_R port, Vdet is a volt-
age at the DET_O port, and Vofs is the zero-input-power
oset voltage. There are three methods to calculate :
1. Vofs can be measured before each detector measure-
ment (by removing or switching o the power source
and measuring ). This method gives an error due to
temperature drift of less than 0.01dB/50
qC.
2. Vofs can be measured at a single reference temperature.
The drift error will be less than 0.25dB.
3. Vofs can either be characterized over temperature and
stored in a lookup table, or it can be measured at two
temperatures and a linear t used to calculate at any
temperature. This method gives an error close to the
method #1.
The RF ports are AC coupled at the RF input to the rst
stage and the RF output of the nal stage. No ground
wired are needed since ground connections are made
with plated through-holes to the backside of the device.
Assembly Techniques
The backside of the MMIC chip is RF ground. For mi-
crostrip applications the chip should be attached direct-
ly to the ground plane (e.g. circuit carrier or heatsink) us-
ing electrically conductive epoxy [1,2].
For best performance, the topside of the MMIC should be
brought up to the same height as the circuit surrounding
it. This can be accomplished by mounting a gold plate
metal shim (same length and width as the MMIC) under
the chip which is of correct thickness to make the chip
and adjacent circuit the same height. The amount of ep-
oxy used for the chip and/or shim attachment should be
just enough to provide a thin llet around the bottom
perimeter of the chip or shim. The ground plain should
be free of any residue that may jeopardize electrical or
mechanical attachment.
The location of the RF bond pads is shown in Figure
12. Note that all the RF input and output ports are in a
Ground-Signal conguration.
RF connections should be kept as short as reasonable
to minimize performance degradation due to undesir-
able series inductance. A single bond wire is normally
sucient for signal connections, however double bond-
ing with 0.7 mil gold wire or use of gold mesh is recom-
mended for best performance, especially near the high
end of the frequency band.
Thermosonic wedge bonding is preferred method for
wire attachment to the bond pads. Gold mesh can be at-
tached using a 2 mil round tracking tool and a tool force
of approximately 22 grams and a ultrasonic power of
roughly 55 dB for a duration of 76 +/- 8 mS. The guided
wedge at an untrasonic power level of 64 dB can be used
for 0.7 mil wire. The recommended wire bond stage tem-
perature is 150 +/- 2
qC.
Caution should be taken to not exceed the Absolute
Maximum Rating for assembly temperature and time.
The chip is 100um thick and should be handled with
care. This MMIC has exposed air bridges on the top sur-
face and should be handled by the edges or with a cus-
tom collet (do not pick up the die with a vacuum on die
center).
This MMIC is also static sensitive and ESD precautions
should be taken.
Notes:
1. Ablebond 84-1 LM1 silver epoxy is recommended.
2. Eutectic attach is not recommended and may jeopardize reliability
of the device.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AMMC-6440-W50 | 功能描述:射頻放大器 Amp MMIC 37-42GHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-6442-W10 | 功能描述:射頻放大器 Amp MMIC 35-40GHz Linear Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-6442-W50 | 功能描述:射頻放大器 Amp MMIC 35-40GHz Linear Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AMMC-6522-W50 | 制造商:Avago Technologies 功能描述:LNA IR MIXER 6-22GHZ - Gel-pak, waffle pack, wafer, diced wafer on film |
| AMMC-6530-W10 | 功能描述:射頻混合器 Mixer MMIC 6-30GHz RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
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