參數資料
型號: AMMC-6220
元件分類: 放大器
英文描述: 6000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 0.067 X 0.031 INCH, DIE
文件頁數: 7/8頁
文件大?。?/td> 399K
代理商: AMMC-6220
7
Assembly Techniques
The backside of the MMIC
chip is RF ground. For
microstrip applications the
chip should be attached
directly to the ground plane
(e.g. circuit carrier or
heatsink) using electrically
conductive epoxy[1]
For best performance, the
topside of the MMIC should be
brought up to the same height
as the circuit surrounding it.
This can be accomplished by
mounting a gold plate metal
shim (same length and width
as the MMIC) under the chip
which is of correct thickness
to make the chip and adjacent
circuit the same height. The
amount of epoxy used for the
chip and/or shim attachment
should be just enough to
provide a thin fillet around the
bottom perimeter of the chip
or shim. The ground plan
should be free of any residue
that may jeopardize electrical
or mechanical attachment.
The location of the RF bond
pads is shown in Figure 12.
Note that all the RF input and
output ports are in a Ground-
Signal-Ground configuration.
The chip is 100um thick and
should be handled with care.
This MMIC has exposed air
bridges on the top surface and
should be handled by the
edges or with a custom collet
(do not pick up the die with a
vacuum on die center).
This MMIC is also static
sensitive and ESD precautions
should be taken.
Notes:
[1] Ablebond 84-1 LM1 silver epoxy is
recommended.
[2] Buckbee-Mears Corporation, St. Paul, MN,
800-262-3824
RF connections should be kept
as short as reasonable to
minimize performance
degradation due to undesirable
series inductance. A single
bond wire is normally
sufficient for signal
connections, however double
bonding with 0.7 mil gold wire
or use of gold mesh[2] is
recommended for best
performance, especially near
the high end of the frequency
band.
Thermosonic wedge bonding is
preferred method for wire
attachment to the bond pads.
Gold mesh can be attached
using a 2 mil round tracking
tool and a tool force of
approximately 22 grams and a
ultrasonic power of roughly 55
dB for a duration of 76 +/- 8
mS. The guided wedge at an
untrasonic power level of 64
dB can be used for 0.7 mil
wire. The recommended wire
bond stage temperature is 150
+/- 2C.
Caution should be taken to not
exceed the Absolute Maximum
Rating for assembly
temperature and time.
Figure 19. AMMC-6220 Schematic
In
Vcc
Out
相關PDF資料
PDF描述
AMMC-6231-W10 16000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMC-6231-W50 16000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMC-6241-W10 26000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMC-6241-W50 26000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMC-6241 26000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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AMMC-6222-W50 功能描述:射頻放大器 LNA 7-21GHz RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel