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參數(shù)資料
| 型號： | AMMC-5026-W50 |
| 元件分類： | 放大器 |
| 英文描述： | 2000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 0.119 X 0.033 INCH, 0.004 INCH HEIGHT, DIE |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 187K |
| 代理商： | AMMC-5026-W50 |
2
AMMC-5026 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
I
dss
Saturated Drain Current
mA
250
350
450
(V
dd=7 V, Vg1=0 V, Vg2=open circuit)
V
p1
First Gate Pinch-off Voltage
V
-1.2
(V
dd=7 V, Idd=0.1 Idss, Vg2=open circuit)
V
g2
Second Gate Self-bias Voltage
V
3.5
(V
dd=7 V, Idd=150 mA, Vg2=open circuit)
I
dsoff
First Gate Pinch-off Current
mA
75
(V
g1)
(V
dd=7 V, Vg1=3.5 V, Vg2=open circuit)
θ
ch-b
Thermal Resistance[2]
°C/W
28
(Backside temperature, T
b = 25°C)
Notes:
1. Backside temperature T
b = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θ
ch-b) = 38°C/W at Tchannel (Tc) = 150°C as measured using the liquid crystal method. Thermal Resistance
at backside temperature (T
b) = 25°C calculated from measured data.
RF Specifications[3,4]
(V
dd = 7V, Idd (Q) = 150 mA, Zin = Z0 = 50Ω)
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
|S
21|
2
Small-signal Gain
dB
8.5
10.5
12.5
|S
21|
2
Small-signal Gain Flatness
dB
±0.75
±1.5
RL
in
Input Return Loss
dB
13
17
RL
out
Output Return Loss
dB
12
15
|S
12|
2
Isolation
dB
23
26
P
-1dB
Output Power @ 1 dB Gain Compression
f = 10 GHz
dBm
22
24
P
sat
Saturated Output Power
f = 10 GHz
dBm
26
OIP3
Output 3rd Order Intercept Point,
dBm
31
RF
in1 = RFin2 = - 20 dBm, f = 10 GHz, f = 2 MHz
NF
Noise Figure
f = 10 GHz
dB
3.6
f = 20 GHz
dB
4.3
H2
Second Harmonic (P
in = 12 dBm at 10 GHz)
dBc
-20
-17.5
H3
Third Harmonic (P
in = 12 dBm at 10 GHz)
dBc
-30
-28
Notes:
1. Data measured in wafer form, T
chuck = 25°C.
2. 100% on wafer RF test is done at frequency = 2, 10, 22, 26.5, and 35 GHz, except as noted.
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