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參數(shù)資料
型號(hào)： AMIS30663CANG2RG
廠商： ON Semiconductor
文件頁數(shù)： 7/11頁
文件大?。?/td> 0K
描述： IC TRANSCEIVER CAN HS 3.3V 8SOIC
標(biāo)準(zhǔn)包裝： 3,000
類型： 收發(fā)器
驅(qū)動(dòng)器/接收器數(shù)： 1/1
規(guī)程： CAN
電源電壓： 4.75 V ~ 5.25 V
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 8-SOICN
包裝： 帶卷 (TR)
AMIS30663
http://onsemi.com
5
Table 5. Absolute Maximum Ratings
Symbol
Parameter
Conditions
Min.
Max.
Unit
VCC
Supply voltage
0.3
+7
V
V33
I/O interface voltage
0.3
+7
V
VCANH
DC voltage at pin CANH
0 < VCC < 5.25 V; no time limit
45
+45
V
VCANL
DC voltage at pin CANL
0 < VCC < 5.25 V; no time limit
45
+45
V
VTxD
DC voltage at pin TxD
0.3
VCC + 0.3
V
VRxD
DC voltage at pin RxD
0.3
VCC + 0.3
V
VREF
DC voltage at pin VREF
0.3
VCC + 0.3
V
Vtran(CANH)
Transient voltage at pin CANH
(Note 2)
150
+150
V
Vtran(CANL)
Transient voltage at pin CANL
(Note 2)
150
+150
V
Vtran(VREF)
Transient voltage at pin VREF
(Note 2)
150
+150
V
Vesd(CANL/CANH)
Electrostatic discharge voltage at
CANH and CANL pin
(Note 3)
(Note 6)
8
500
+8
+500
kV
V
Vesd
Electrostatic discharge voltage at all
other pins
(Note 4)
(Note 6)
4
250
+ 4
+250
kV
V
Latchup
Static latchup at all pins
(Note 5)
100
mA
Tstg
Storage temperature
55
+155
°C
Tamb
Ambient temperature
40
+125
°C
Tjunc
Maximum junction temperature
40
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a and 3b (see Figure 4).
3. Standardized human body model system ESD pulses in accordance to IEC 1000.4.2.
4. Standardized human body model ESD pulses in accordance to MIL883 method 3015. Supply pin 8 is ±4 kV.
5. Static latchup immunity: static latchup protection level when tested according to EIA/JESD78.
6. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.31993.
Table 6. Thermal Characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(vja)
Thermal resistance from junction to ambient in SO8 package
In free air
145
K/W
Rth(vjs)
Thermal resistance from junction to substrate of bare die
In free air
45
K/W
Table 7. DC Characteristics
(VCC = 4.75 to 5.25 V; V33 = 2.9 V to 3.6 V; Tjunc = 40 to +150°C; RLT = 60 W unless specified otherwise.)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Supply (pin VCC and pin V33)
ICC
Supply current
Dominant;
VTXD = 0 V
Recessive;
VTXD = VCC
45
4
65
8
mA
I33
I/O interface current
V33 = 3.3 V;
CL = 20 pF; recessive
1
mA
I33
I/O interface current (Note 7)
V33 = 3.3 V;
CL = 20 pF; 1 Mbps
170
mA
Transmitter Data Input (pin TxD)
VIH
HIGHlevel input voltage
Output recessive
2.0
VCC
V
VIL
LOWlevel input voltage
Output dominant
0.3
+0.8
V
IIH
HIGHlevel input current
VTxD = V33
1
0
+1
mA
IIL
LOWlevel input current
VTxD = 0 V
50
200
300
mA
7. Not tested on ATE.
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