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參數(shù)資料
| 型號： | AM82731-050 |
| 廠商： | 意法半導體 |
| 英文描述： | RF & Microwave Transistors S-Band Radar Applications(用于S波段雷達脈沖輸出和驅動的RF和微波晶體管) |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 60K |
| 代理商： | AM82731-050 |
August 1992
S-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
RUGGEDIZED VSWR 3:1 @ 1 dB OVER-
DRIVE
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
50 W MIN. WITH 6 dB GAIN
DESCRIPTION
The AM82731-050 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
The device is capable of operation over a wde
range of pulse widths, duty cycles and tempera-
tures and can withstand a 3:1 output VSWR with
a +1 dB input overdrive. Low RF thermal resist-
ance, refractory/gold metallization, and compu-
terized automatic wire bonding techniques ensure
high reliability and product consistency.
The AM82731-050 is supplied in the AMPAC
Hermetic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
PIN CONNECTION
BRANDING
82731-50
ORDER CODE
AM82731-050
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
Power Dissipation*
I
C
Device Current*
V
CC
Collector-Supply Voltage*
T
J
Junction Temperature (Pulsed RF Operation)
T
STG
Storage Temperature
Parameter
(T
C
≤
50
°
C)
Value
167
Unit
W
8
A
V
°
C
°
C
46
250
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
1.2
°
C/W
*Applies only to rated RFamplifier operation
AM82731-050
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
1/4
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