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參數(shù)資料
| 型號： | AM81214-060 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:22; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:12-35 RoHS Compliant: No |
| 中文描述： | L波段雷達(dá)應(yīng)用的射頻 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 61K |
| 代理商： | AM81214-060 |
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
.310 x .310 2LFL (S064)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
5:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
5.5 W MIN. WITH 10 dB GAIN
DESCRIPTION
The AM81214-006 device is a high power Class
C transistor specifically designed for L-Band Ra-
dar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 5:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire
bonding techniques ensure high reliability and
product consistency.
AM81214-006 is supplied in the grounded IM-
PAC
Hermetic Metal/Ceramic package with in-
ternal input/output matching structures.
PIN CONNECTION
BRANDING
81214-6
ORDER CODE
AM81214-6
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
P
DISS
I
C
Parameter
(T
C
≤
100
°
C)
Value
16.7
0.82
Unit
W
A
Power Dissipation*
Device Current*
V
CC
Collector-Supply Voltage*
32
V
T
J
Junction Temperature (Pulsed RF Operation)
250
°
C
°
C
T
STG
Storage Temperature
65 to +200
R
TH(j-c)
Junction-Case Thermal Resistance*
9.0
°
C/W
*Appliesonly torated RF amplifieroperation
AM81214-006
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
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