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參數(shù)資料
| 型號： | AM80610-030 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, SO42, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 44K |
| 代理商： | AM80610-030 |
RF & MICROWAVE TRANSISTORS
UHF COMMUNICATIONS APPLICATIONS
.400 x .400 2NLF L (S042)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
INPUT/OUTPUT MATCHING
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 30 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
The AM80610-030 is a high po wer, common
base NPN silicon bipolar device optimized for
CW operation in the 620 - 960 MHz frequency
range.
AM80610-030 utilizes a rugged, overlay, emitter-
ballasted L-Band die geometry to achieve high
gain and collector efficiency and is suitable for
driver or output stage use in Class C power am-
plifiers. Typical applications include military com-
munications, ECM, and test equipment.
The AM80610-030 is provided in the industry-
standard, metal/ceramic AMPAC
hermetic
package.
PIN CONNECTION
BRANDING
80610-30
ORDER CODE
AM80610-030
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Uni t
PDISS
Power Dissipation*
(TC
≤ 50°C)
57
W
IC
Device Current*
3.0
A
VCC
Collector-Supply Voltage*
32
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
2.6
°C/W
*Applies only to rated RF amplifier operation
AM80610-030
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
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