參數資料
型號: Am75PDL193BHHa
廠商: Spansion Inc.
英文描述: 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
中文描述: 128兆位(8米× 16位),3.0伏的CMOS只,同步讀/寫閃存
文件頁數: 17/129頁
文件大小: 980K
代理商: AM75PDL193BHHA
February 6, 2004
Am75PDL191BHHa/Am75PDL193BHHa
15
A D V A N C E I N F O R M A T I O N
PIN DESCRIPTION
A20–A0
= 21 Address Inputs (Common)
A21
= Address Input (Flash)
A22
= Address Input (PDL127 only)
(Flash)
DQ15–DQ0
= 16 Data Inputs/Outputs (Common)
CE#f1
= Chip Enable 1 (Flash) (PDL 127
only)
CE#f1, CE#f2 = Chip Enable Inputs. CE#f1 controls
the 64 Mb in Banks 1A and 1B.
CE#f2 controls the 64 Mb in Banks
2A and 2B.
CE#1ps
= Chip Enable 1 (pSRAM) (PDL129
only)
CE2ps
= Chip Enable 2 (pSRAM)
OE#
= Output Enable (Common)
WE#
= Write Enable (Common)
RY/BY#
= Ready/Busy Output and open drain.
When RY/BY# = V
IH
, the device is
ready to accept read operations and
commands. When RY/BY# = V
OL
,
the device is either executing an em-
bedded algorithm or the device is
executing a hardware reset opera-
tion.
UB#s
= Upper Byte Control (pSRAM)
LB#s
= Lower Byte Control (pSRAM)
RESET#
= Hardware Reset Pin, Active Low
WP#/ACC
= Write Protect/Acceleration Input.
When WP/ACC#= V
IL
, the highest
and lowest two 4K-word sectors are
write protected regardless of other
sector protection configurations.
When WP/ACC#= V
IH
, these sector
are unprotected unless the DYB or
PPB is programmed. When
WP/ACC#= 12V, program and erase
operations are accelerated.
V
CC
f
= Flash 3.0 volt-only single power sup-
ply (see Product Selector Guide for
speed options and voltage supply
tolerances)
V
CC
s
V
SS
NC
LOGIC SYMBOL
= pSRAM Power Supply
= Device Ground (Common)
= Pin Not Connected Internally
21
16
DQ15–DQ0
A20–A0
CE#f1
OE#
WE#
RESET#
UB#s
RY/BY#
WP#/ACC
A21
LB#s
CE#1ps
CE2ps
CE#f2 (PDL129 Only)
A22 (PDL127 Only)
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