參數(shù)資料
型號: Am75PDL191CHH
廠商: Spansion Inc.
英文描述: 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
中文描述: 128兆位(8米× 16位),3.0伏的CMOS只,同步讀/寫閃存
文件頁數(shù): 124/136頁
文件大小: 1250K
代理商: AM75PDL191CHH
122
Am75PDL191CHH/Am75PDL193CHH
February 5, 2004
A D V A N C E I N F O R M A T I O N
DC Characteristics (Ta = -25
o
C to 85
o
C, VDD = 2.6 to 3.3 V)
Notes:
1.
IDDO depends on the cycle time.
2.
IDDO depends on output loading. Specified values are defined with
the output open condition.
Capacitance (Ta = -25
o
C, f = 1 MHz)
Note:
1.
2.
3.
This parameter is sampled periodically and is not 100% tested.
AC measurements are assumed t
R
, t
F
= 5 ns.
Parameters t
, t
, t
and t
define the time at which the
output goes the open condition and are not output voltage
reference levels.
Data cannot be retained at deep power-down standby mode.
If OE# is high during the write cycle, the outputs will remain at
high impedance.
4.
5.
6.
During the output state of I/O signals, input signals of reverse
polarity must not be applied.
If CE1# or LB#/UB# goes LOW coincident with or after WE# goes
LOW, the outputs will remain at high impedance.
If CE1 or LB#/UB# goes HIGH coincident with or before WE#
goes HIGH, the outputs will remain at high impedance.
7.
8.
Symbol
I
IL
I
LO
V
OH
V
OL
Parameter
Test Condition
Min
-1.0
-1.0
2.4
-
-
Typ
-
-
-
-
Max
+1.0
+1.0
Unit
μ
A
μ
A
V
V
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
V
IN
= 0 V to V
DD
Output disable, V
OUT
= 0 V to V
DD
I
OH
= -0.5 mA
I
OL
= -1.0 mA
CE1# = V
IL
CE2 = V
IH,
I
OUT =
0 mA
CE1# = V
IL,
CE2 = V
IH,
Page add. cycling
,
I
OUT =
0 mA
0.4
I
DDO1
Operating Current
t
RC
= min
-
50
mA
I
DDO2
Page Access Operating Current
t
PC
= min
-
-
25
mA
I
DDS
I
DDSD
Standby Current (MOS)
CE1# = V
DD
- 0.2V
,
CE2 = V
DD
- 0.2V
CE2 = 0.2V
-
-
100
μ
A
μ
A
Deep Power-down Standby Current
-
-
5
Symbol
C
IN
C
OUT
Parameter
Test Condition
Max
10
10
Unit
pF
pF
Input Capitance
Output Capitance
V
IN
= GND
V
OUT
= GND
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