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| 型號(hào)： | AM75PDL191BHHA |
| 廠商： | Spansion Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| 中文描述： | 128兆位（8米× 16位），3.0伏的CMOS只，同步讀/寫(xiě)閃存 |
| 文件頁(yè)數(shù)： | 11/129頁(yè) |
| 文件大?。?/td> | 980K |
| 代理商： | AM75PDL191BHHA |
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February 6, 2004
Am75PDL191BHHa/Am75PDL193BHHa
9
A D V A N C E I N F O R M A T I O N
PSRAM AC Characteristics . . . . . . . . . . . . . . . . . 66
CE#s Timing ...........................................................................66
Figure 12. Timing Diagram for Alternating
Between Pseudo SRAM to Flash.................................................... 66
Figure 13. Timing Waveform of Power-up ...................................... 66
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . .67
Read-Only Operations – Am29PDL127H ...............................67
Read-Only Operations – Am29PDL129H ...............................67
Figure 14. Read Operation Timings................................................ 68
Figure 15. Page Read Operation Timings....................................... 68
Hardware Reset (RESET#) ....................................................69
Figure 16. Reset Timings................................................................ 69
Erase and Program Operations ..............................................70
Figure 17. Program Operation Timings........................................... 71
Figure 18. Accelerated Program Timing Diagram........................... 71
Figure 19. Chip/Sector Erase Operation Timings ........................... 72
Figure 20. Back-to-back Read/Write Cycle Timings ....................... 73
Figure 21. Data# Polling Timings (During Embedded Algorithms).. 73
Figure 22. Toggle Bit Timings (During Embedded Algorithms)....... 74
Figure 23. DQ2 vs. DQ6.................................................................. 74
Temporary Sector Unprotect ..................................................75
Figure 24. Temporary Sector Unprotect Timing Diagram............... 75
Figure 25. Sector/Sector Block Protect and
Unprotect Timing Diagram.............................................................. 76
Alternate CE# Controlled Erase and Program Operations .....77
Figure 26. Flash Alternate CE# Controlled Write (Erase/Program)
Operation Timings........................................................................... 78
Erase And Programming Performance . . . . . . . .79
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 79
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 79
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 79
Device Bus Operations . . . . . . . . . . . . . . . . . . . . .80
Table 1. Am29DL640H Device Bus Operations ..............................80
Word/Byte Configuration ........................................................ 80
Requirements for Reading Array Data ...................................80
Writing Commands/Command Sequences ............................81
Accelerated Program Operation ..........................................81
Autoselect Functions ...........................................................81
Simultaneous Read/Write Operations with Zero Latency .......81
Standby Mode ........................................................................ 81
Automatic Sleep Mode ...........................................................81
RESET#: Hardware Reset Pin ...............................................82
Output Disable Mode ..............................................................82
Table 2. Am29DL640H Sector Architecture ....................................82
Table 3. Bank Address ....................................................................85
Autoselect Mode ..................................................................... 85
Sector/Sector Block Protection and Unprotection .................. 87
Table 5. Am29DL640H Boot Sector/Sector Block Addresses for Pro-
tection/Unprotection ........................................................................87
Write Protect (WP#) ................................................................87
Table 6. WP#/ACC Modes ..............................................................88
Temporary Sector Unprotect ..................................................88
Figure 1. Temporary Sector Unprotect Operation........................... 88
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 89
SecSi (Secured Silicon) Sector
Flash Memory Region ............................................................90
Figure 3. SecSi Sector Protect Verify.............................................. 91
Hardware Data Protection ......................................................91
Low VCC Write Inhibit .........................................................91
Write Pulse “Glitch” Protection ............................................91
Logical Inhibit .......................................................................91
Power-Up Write Inhibit .........................................................91
Common Flash Memory Interface (CFI) . . . . . . . 91
Command Definitions . . . . . . . . . . . . . . . . . . . . . 95
Reading Array Data ................................................................95
Reset Command .....................................................................95
Autoselect Command Sequence ............................................95
Enter SecSi Sector/Exit SecSi Sector
Command Sequence ..............................................................95
Word Program Command Sequence ......................................96
Unlock Bypass Command Sequence ..................................96
Figure 4. Program Operation ......................................................... 97
Chip Erase Command Sequence ...........................................97
Sector Erase Command Sequence ........................................97
Figure 5. Erase Operation.............................................................. 98
Erase Suspend/Erase Resume Commands ...........................98
Write Operation Status . . . . . . . . . . . . . . . . . . . 100
DQ7: Data# Polling ...............................................................100
Figure 6. Data# Polling Algorithm ................................................ 100
RY/BY#: Ready/Busy# .......................................................... 101
DQ6: Toggle Bit I ..................................................................101
Figure 7. Toggle Bit Algorithm...................................................... 101
DQ2: Toggle Bit II .................................................................102
Reading Toggle Bits DQ6/DQ2 .............................................102
DQ5: Exceeded Timing Limits ..............................................102
DQ3: Sector Erase Timer .....................................................102
Table 12. Write Operation Status ................................................. 103
Absolute Maximum Ratings . . . . . . . . . . . . . . . 104
Figure 8. Maximum Negative Overshoot Waveform.................... 104
Figure 9. Maximum Positive Overshoot Waveform...................... 104
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 105
Figure 10. I
CC1
Current vs. Time (Showing Active and
Automatic Sleep Currents)........................................................... 106
Figure 11. Typical I
vs. Frequency.......................................... 106
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . 107
Figure 12. Test Setup.................................................................. 107
Figure 13. Input Waveforms and Measurement Levels ............... 107
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . 108
Read-Only Operations .........................................................108
Figure 14. Read Operation Timings............................................. 108
Hardware Reset (RESET#) ..................................................109
Figure 15. Reset Timings............................................................. 109
Erase and Program Operations ............................................110
Figure 16. Program Operation Timings........................................ 111
Figure 17. Accelerated Program Timing Diagram........................ 111
Figure 18. Chip/Sector Erase Operation Timings ........................ 112
Figure 19. Back-to-back Read/Write Cycle Timings .................... 113
Figure 20. Data# Polling Timings (During Embedded Algorithms) 113
Figure 21. Toggle Bit Timings (During Embedded Algorithms).... 114
Figure 22. DQ2 vs. DQ6............................................................... 114
Temporary Sector Unprotect ................................................115
Figure 23. Temporary Sector Unprotect Timing Diagram ............ 115
Figure 24. Sector/Sector Block Protect and
Unprotect Timing Diagram........................................................... 116
Alternate CE# Controlled Erase and Program Operations ...117
Figure 25. Alternate CE# Controlled Write (Erase/Program)
Operation Timings........................................................................ 118
pSRAM AC CHaracteristics . . . . . . . . . . . . . . . . 119
Functional Description ..........................................................119
Absolute Maximum Ratings ..................................................119
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM75PDL191BHHA70I | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| Am75PDL193BHHa | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM75PDL193BHHA70I | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM75PDL191CHHA | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM75PDL191CHHA70I | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM75PDL191BHHA70I | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM75PDL191CHH | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM75PDL191CHH_0402 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM75PDL191CHH70I | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
| AM75PDL191CHHA | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory |
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