- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375309 > AM70PDL7BDH66IT (Spansion Inc.) Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) PDF資料下載
參數(shù)資料
| 型號(hào)： | AM70PDL7BDH66IT |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| 中文描述： | 堆疊式多芯片封裝（MCP / XIP）的快閃記憶體，數(shù)據(jù)存儲(chǔ)的MirrorBit閃存和移動(dòng)存儲(chǔ)芯片（XIP）的 |
| 文件頁(yè)數(shù)： | 82/128頁(yè) |
| 文件大?。?/td> | 916K |
| 代理商： | AM70PDL7BDH66IT |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)當(dāng)前第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)
80
Am70PDL127BDH/Am70PDL129BDH
November 25, 2003
A D V A N C E I N F O R M A T I O N
GENERAL DESCRIPTION (LV640M)
The Am29LV640MH is a 64 Mbit, 3.0 volt single power
supply flash memory device organized as 4,194,304
words. The device has an 8-bit/16-bit bus and can be
programmed either in the host system or in standard
EPROM programmers.
An access time of 110 ns is available. Each device re-
quires only a
single 3.0 volt power supply
for both
read and write functions. In addition to a V
CC
input, a
high-voltage
accelerated program (ACC)
feature pro-
vides shorter programming times through increased
current on the WP#/ACC input. This feature is in-
tended to facilitate factory throughput during system
production, but may also be used in the field if desired.
The device is entirely command set compatible with
the
JEDEC single-power-supply Flash standard
.
Commands are written to the device using standard
microprocessor write timing. Write cycles also inter-
nally latch addresses and data needed for the pro-
gramming and erase operations.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase oper-
ation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle)
status bits
or
monitor the
Ready/Busy# (RY/BY#)
output to deter-
mine whether the operation is complete. To facilitate
programming, an
Unlock Bypass
mode reduces com-
mand sequence overhead by requiring only two write
cycles to program data instead of four.
The
Versatile I/O
(V
IO
) control allows the host sys-
tem to set the voltage levels that the device generates
and tolerates on the CE# control input and DQ I/Os to
the same voltage level that is asserted on the V
IO
pin.
Refer to the
Ordering Information
section for valid V
IO
options.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This can be achieved in-system or via programming
equipment.
The
Erase Suspend/Erase Resume
feature allows
the host system to pause an erase operation in a given
sector to read or program any other sector and then
complete the erase operation. The
Program Sus-
pend/Program Resume
feature enables the host sys-
tem to pause a program operation in a given sector to
read any other sector and then complete the program
operation.
The
hardware RESET# pin
terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode
when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The
Write Protect (WP#)
feature protects the first or
last sector by asserting a logic low on the WP#/ACC
pin. The protected sector will still be protected even
during accelerated programming.
The
SecSi
(Secured Silicon) Sector
provides a
128-word area for code or data that can be perma-
nently protected. Once this sector is protected, no fur-
ther changes within the sector can occur.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effec-
tiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM70PDL7BDH85IS | Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL7BDH85IT | Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH66IS | Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH66IT | Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH85IS | Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM70PDL7BDH85IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL7BDH85IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH66IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH66IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL9BDH85IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。