參數(shù)資料
型號： AM70PDL127BDH85IT
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA93
封裝： 13 X 9 MM, FBGA-93
文件頁數(shù)： 3/128頁
文件大?。?/td> 918K
代理商： AM70PDL127BDH85IT
ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication#
30536
Issue Date:
November 25, 2003
Rev:
A
Amendment
+3
Am70PDL127BDH/Am70PDL129BDH
Stacked Multi-Chip Package (MCP/XIP) Flash Memory,
Data storage MirrorBit Flash, and pSRAM (XIP)
2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and
32 Mbit (2 M x 16-Bit) CMOS Pseudo Static RAM with Page Mode
DISTINCTIVE CHARACTERISTICS
MCP Features
Consists of Am29PDL127H/Am29PDL129H, 32 Mb
pSRAM and two Am29LV640M.
■
■
Power supply voltage of 2.7 to 3.3 volt
■
High performance (XIP)
— Access time as fast as 65 ns initial / 25 ns page
High performance (Data Storage)
— Access time as fast as 110 ns initial / 30 ns page
Package
— 93-Ball FBGA
Operating Temperature
— –40°C to +85°C
■
■
■
Flash Memory Features (XIP)
AM29PDL127H/AM29PDL129H
ARCHITECTURAL ADVANTAGES
■
128 Mbit Page Mode device
— Page size of 8 words: Fast page read access from random
locations within the page
■
Dual Chip Enable inputs (PDL129 only)
— Two CE# inputs control selection of each half of the memory
space
■
Single power supply operation
— Full Voltage range: 2.7 to 3.3 volt read, erase, and program
operations for battery-powered applications
■
Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
executing erase/program functions in another bank
— Zero latency switching from write to read operations
■
FlexBank Architecture
— 4 separate banks, with up to two simultaneous operations
per device
PDL127:
— Bank A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
— Bank B: 48 Mbit (32 Kw x 96)
— Bank C: 48 Mbit (32 Kw x 96)
— Bank D: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
PDL129:
— Bank 1A: 48 Mbit (32 Kw x 96)
— Bank 1B: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
— Bank 2A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
— Bank 2B: 48 Mbit (32 Kw x 96)
■
SecSi
TM
(Secured Silicon) Sector region
— Up to 128 words accessible through a command sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
■
Both top and bottom boot blocks in one device
■
Manufactured on 0.13 μm process technology
■
20-year data retention at 125°C
■
Minimum 1 million erase cycle guarantee per sector
PERFORMANCE CHARACTERISTICS
■
High Performance
— Page access times as fast as 25 ns
— Random access times as fast as 65 ns
■
Power consumption (typical values at 10 MHz)
— 45 mA active read current
— 25 mA program/erase current
— 1 μA typical standby mode current
SOFTWARE FEATURES
■
Software command-set compatible with JEDEC 42.4
standard
— Backward compatible with Am29F and Am29LV families
■
CFI (Common Flash Interface) complaint
— Provides device-specific information to the system, allowing
host software to easily reconfigure for different Flash devices
■
Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or program
operations in other sectors of same bank
■
Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
HARDWARE FEATURES
■
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or erase
cycle completion
■
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array data
■
WP#/ACC (Write Protect/Acceleration) input
— At V
, hardware level protection for the first and last two 4K
word sectors.
— At V
IH
, allows removal of sector protection
— At V
, provides accelerated programming in a factory
setting
相關(guān)PDF資料
PDF描述
AM70PDL127BDH 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
AM70PDL127BDH66IS 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
AM70PDL127BDH66IT 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
AM70PDL127BDH85IS 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
AM70PDL129BDH 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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AM70PDL127CDH66I 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
AM70PDL127CDH66IS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
AM70PDL127CDH66IT 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
AM70PDL127CDH85I 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
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