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參數(shù)資料
| 型號： | AM55-0007 |
| 元件分類： | 放大器 |
| 英文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SSOP-24 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 239K |
| 代理商： | AM55-0007 |
V 2.00
14 0 mW Power Amplifier with T/R Switch
AM55-0007
1
0.710 in.
PIN
Label
Value
Purpose
C1 - C4
33 pF
Bypass (GHz)
C5 - C8
220 pF
Bypass (MHz)
C9
0.01 F
Bypass (kHz)
Recommended PCB Configuration
Layout View
Cross-Section View
External Circuitry Parts List
External Circuitry
All off-chip components are low-cost surface mount components obtain-
able from multiple sources. (0.020 in.x 0.040 in.or
0.030 in.x 0.050 in.)
VGG
T/R CTRL
RX OUT
PA OUT
VDD PA
ATTN CTRL
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VDD1
VDD2
PA IN
SLEEP CTRL
C4
C8
C3
C7
C5
C1
C9
C6
C2
The PCB dielectric between RF traces and RF ground
layers should be chosen to reduce RF discontinuities
between 50-
lines and package pins. M/A-COM rec-
ommends an FR-4 dielectric thickness of 0.008 in. (0.2
mm), yielding a 50-
line width of 0.015 in.
(0.38 mm). The recommended metalization thickness is
1 oz. copper.
Shaded traces are vias to DC routing layer and traces on
DC routing layer.
Biasing Procedure
The AM55-0007 requires the VGG bias be applied prior
to any VDD bias. Permanent damage may occur if this
procedure is not followed. All FETs in the PA will draw
excessive current and damage internal circuitry.
RF Traces + Components
RF Ground
DC Routing
Customer Defined
C7 C3
C8 C4
C2 C6
C9
C5
C1
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