參數(shù)資料
型號： AM50DLI28BG
廠商： Advanced Micro Devices, Inc.
元件分類： SRAM
英文描述： Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
中文描述： 堆疊式多芯片封裝（MCP）閃存和SRAM
文件頁數(shù)： 38/64頁
文件大?。?/td> 974K
代理商： AM50DLI28BG
January 8, 2003
Am50DL128BG
37
P R E L I M I N A R Y
Notes:
1.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at
V
IH
.
Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
I
active while Embedded Erase or Embedded Program is in
progress.
2.
3.
4.
Automatic sleep mode enables the low power mode when
addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode
current is 200 nA.
5.
Not 100% tested.
6.
CE#f refers to chip enable input of active flash (device being
addressed).
7.
Typical and maximum current specifications shown are for each
flash device.
FLASH DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
RESET# Input Load Current
V
CC
= V
CC max
; RESET# = 12.5 V
35
μA
I
LR
Reset Leakage Current
V
CC
= V
CC max
; RESET# = 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±
1.0
μA
I
LIA
ACC Input Leakage Current
V
CC
= V
CC max
, WP#/ACC
= V
ACC max
35
μA
I
CC1
f
Flash V
Active Read Current
(Notes 1, 2)
CE#f = V
IL
,
OE# = V
IH
,
Byte Mode
5 MHz
10
16
mA
1 MHz
2
4
CE#f = V
,
OE# =
V
IH
,
Word Mode
5 MHz
10
16
1 MHz
2
4
I
CC2
f
Flash V
CC
Active Write Current (Notes 2, 3) CE#f = V
IL
,
OE# =
V
IH
, WE# = V
IL
15
30
mA
I
CC3
f
Flash V
CC
Standby Current (Notes 2, 7)
V
f = V
, CE#f, RESET#,
WP#/ACC = V
CC
f
±
0.3 V
V
f = V
, RESET# = V
SS
±
0.3 V,
WP#/ACC = V
CC
f
±
0.3 V
V
CC
f = V
CC max
, V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
0.2
5
μA
I
CC4
f
Flash V
CC
Reset Current (Notes 2, 7)
0.2
5
μA
I
CC5
f
Flash V
Current Automatic Sleep Mode
(Notes 2, 4, 7)
0.2
5
μA
I
CC6
f
Flash V
Active Read-While-Program
Current (Notes 1, 2)
CE#f = V
IL
,
OE# = V
IH
Byte
21
45
mA
Word
21
45
I
CC7
f
Flash V
Active Read-While-Erase
Current (Notes 1, 2)
CE#f = V
IL
, OE# = V
IH
Byte
21
45
mA
Word
21
45
I
CC8
f
Flash V
Active
Program-While-Erase-Suspended Current
(Notes 2, 5)
CE#f = V
IL
, OE#f = V
IH
17
35
mA
V
IL
Input Low Voltage
–0.2
0.8
V
V
IH
Input High Voltage
2.4
V
CC
+ 0.2
V
V
HH
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
8.5
9.5
V
V
ID
Voltage for Sector Protection, Autoselect
and Temporary Sector Unprotect
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 4.0 mA, V
CC
f = V
CC
s = V
CC min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.0 mA, V
CC
f = V
CC
s = V
CC min
0.85 x
V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.4
V
LKO
Flash Low V
CC
Lock-Out Voltage (Note 5)
2.3
2.5
V
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