參數(shù)資料
型號(hào): AM45DL3208GT85IS
廠商: ADVANCED MICRO DEVICES INC
元件分類: 存儲(chǔ)器
英文描述: Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封裝: 8 X 11.60 MM, FBGA-73
文件頁(yè)數(shù): 43/66頁(yè)
文件大?。?/td> 1196K
代理商: AM45DL3208GT85IS
March 12, 2004
Am45DL3208G
41
P R E L I M I N A R Y
TEST CONDITIONS
Table 18.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Note:
Diodes are IN3064 or equivalent
Figure 12.
Test Setup
Test Condition
70, 85
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 13.
Input Waveforms and Measurement Levels
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