參數(shù)資料
型號: AM45DL3208GB85IT
廠商: ADVANCED MICRO DEVICES INC
元件分類: 存儲器
英文描述: Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封裝: 8 X 11.60 MM, FBGA-73
文件頁數(shù): 58/66頁
文件大?。?/td> 1196K
代理商: AM45DL3208GB85IT
56
Am45DL3208G
March 12, 2004
P R E L I M I N A R Y
Pseudo SRAM AC CHARACTERISTICS
Read Cycle
Notes:
1. WE# = V
IH
, if CIOs is low, ignore UB#s/LB#s timing.
2. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to device
interconnection.
4. Do not access device with cycle timing shorter than t
RC
for continuous periods < 10 μs.
Figure 30.
Pseudo SRAM Read Cycle
Data Valid
High-Z
t
RC
CE#1s
Address
OE#
Data Out
t
OH
t
AA
t
CO1
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
HZ
CE2s
t
CO2
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