參數(shù)資料
型號: AM42-0007
元件分類: 放大器
英文描述: 14000 MHz - 14500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: HERMETIC SEALED, CERAMIC, CR-15, 10 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 204K
代理商: AM42-0007
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
2
GaAs MMIC VSAT Power Amplifier, 2.0 W
14.0 - 14.5 GHz
M/A-COM Products
Rev. V7
AM42-0007
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Absolute Maximum Ratings
2,3,4
Parameter
Absolute Maximum
VDD
12 Volts
VGG
-10 Volts
Power Dissipation
13.2 W
RF Input Power
+23 dBm
Channel Temperature
150°C
Storage Temperature
-65°C to +150°C
IDS
2100 mA
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. M/A-COM does not recommend sustained operation near
these survivability limits.
4. Case Temperature (TC) = +25°C.
Electrical Specifications: TA = +25°C, VDD = +9 V, VGG =- 5.0 V, Z0 = 50Ω, F = 14.0-14.5 GHz
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Linear Gain
PIN < 0 dBm
dB
19
22
Input VSWR
PIN < 0 dBm
Ratio
2.5:1
2.7:1
Output VSWR
PIN < 0 dBm
Ratio
2.7:1
Saturated Output Power
PIN = +14 dBm
dBm
33
Output Power at P1dB
dBm
31
32
Output IP31
dBm
41
Power Added Efficiency
PIN = +14 dBm
%
22
Bias Current
IDD (No RF)
IGG (No RF)
mA
850
18
25
Thermal Resistance
25°C Heat Sink
°C/W
9.5
Detector Output Voltage
RL = 10 K , POUT = +31dBm
V
+3.5
1. IP3 is measured with two +24 dBm output tones @ 1 MHz spacing
Typical Bias Configuration
5,6,7,8,9
5. Nominal bias is obtained by first connecting –5 volts to pin 4
(VGG), followed by connection +9 volts to pin 6 (VDD). Note
sequence.
6. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.
7. No DC bias voltage appears at the RF ports.
8. For optimum IP3 performance, the VDD bypass capacitors
should be placed within 0.5 inches of pin 6.
9. Resistor and capacitors surrounding the amplifier are
suggestions and not included as part of the AM42-0007.
VDD
6
3.3 F
RF Out
8
RF In
3
0.01 F
VGG
4
GND
1,2,5,9,10
0.01 F
AM42-0007
VDET
7
10 K
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