參數(shù)資料
型號： AM41PDS3228DT10IS
廠商： ADVANCED MICRO DEVICES INC
元件分類： 存儲器
英文描述： 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA73
封裝： 8 X 11.60 MM, FBGA-73
文件頁數(shù)： 57/59頁
文件大小： 560K
代理商： AM41PDS3228DT10IS
56
Am41PDS3228D
May 13, 2002
P R E L I M I N A R Y
SRAM DATA RETENTION
Notes:
1. CE1#s
≥
V
CC
– 0.2 V, CE2s
≥
V
CC
– 0.2 V (CE1#s controlled) or CE2s
≤
0.2 V (CE2s controlled), CIOs = V
SS
or V
CC
.
2. Typical values are not 100% tested.
Figure 33.
CE1#s Controlled Data Retention Mode
Figure 34.
CE2s Controlled Data Retention Mode
Parameter
Symbol
Parameter Description
Test Setup
Min
Typ
Max
Unit
V
DR
V
CC
for Data Retention
CS1#s
≥
V
CC
– 0.2 V (Note 1)
V
CC
= 3.0 V, CE1#s
≥
V
CC
– 0.2 V
(Note 1)
1.0
2.2
V
I
DR
Data Retention Current
0.5
(Note 2)
6
μA
t
SDR
t
RDR
Data Retention Set-Up Time
See data retention waveforms
0
ns
Recovery Time
t
RC
ns
V
DR
V
CC
1.8V
1.4V
CE1#s
GND
Data Retention Mode
CE1#s
≥
V
CC
-
0.2 V
t
SDR
t
RDR
V
CC
1.8 V
CE2s
0.4 V
GND
V
DR
Data Retention Mode
t
SDR
t
RDR
CE2s <
0.2 V
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