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  • 參數(shù)資料
    型號: AM41DL3208GT35IT
    廠商: Spansion Inc.
    元件分類: DRAM
    英文描述: Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
    中文描述: 堆疊式多芯片封裝(MCP)閃存和SRAM
    文件頁數(shù): 61/65頁
    文件大?。?/td> 1288K
    代理商: AM41DL3208GT35IT
    60
    Am41DL3208G
    February 13, 2002
    P R E L I M I N A R Y
    AC CHARACTERISTICS
    Notes:
    1. UB#s and LB#s controlled, CIOs must be high.
    2. t
    CW
    is measured from CE1#s going low to the end of write.
    3. t
    WR
    is measured from the end of write to the address change. t
    WR
    applied in case a write ends as CE1#s or WE# going high.
    4. t
    AS
    is measured from the address valid to the beginning of write.
    5. A write occurs during the overlap (t
    WP
    ) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
    asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
    write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
    WP
    is measured from the beginning of write
    to the end of write.
    Figure 32.
    SRAM Write Cycle
    UB#s and LB#s Control
    Address
    Data Valid
    UB#s, LB#s
    WE#
    Data In
    Data Out
    High-Z
    High-Z
    t
    WC
    CE1#s
    CE2s
    t
    AW
    t
    BW
    t
    DW
    t
    DH
    t
    WR
    (See Note 3)
    t
    AS
    (See Note 4)
    t
    CW
    (See Note 2)
    t
    CW
    (See Note 2)
    t
    WP
    (See Note 5)
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