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參數(shù)資料
| 型號(hào)： | AM29PL320DT70RWPI |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| 中文描述： | 1M X 32 FLASH 3V PROM, 70 ns, PBGA84 |
| 封裝： | 11 X 12 MM, 0.80 MM PITCH, FBGA-84 |
| 文件頁(yè)數(shù)： | 12/50頁(yè) |
| 文件大?。?/td> | 947K |
| 代理商： | AM29PL320DT70RWPI |
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10
Am29PL320D
October 2, 2003
Page Mode Read
The Am29PL320D is capable of fast page mode read
and is compatible with the page mode Mask ROM read
operation. This mode provides faster read access
speed for random locations within a page. The page
size of the Am29PL320D device is 8 words, or 4 dou-
ble words, with the appropriate page being selected by
the higher address bits A19–A2 and the LSB bits A1–
A0 (in the double word mode) and A1 to A-1 (in the
word mode) determining the specific word/double word
within that page. This is an asynchronous operation
with the microprocessor supplying the specific word or
double word location.
The random or initial page access is equal to t
ACC
or
t
CE
and subsequent page read accesses (as long as
the locations specified by the microprocessor falls
within that page) is equivalent to t
PACC
. When CE# is
deasserted and reasserted for a subsequent access,
the access time is t
ACC
or t
CE
. Here again, CE# selects
the device and OE# is the output control and should be
used to gate data to the output inputs if the device is
selected. Fast page mode accesses are obtained by
keeping A19–A2 constant and changing A1 to A0 to
select the specific double word, or changing A1 to A-1
to select the specific word, within that page.
The following tables determine the specific word and
double word within the selected page:
Table 2.
Double Word Mode
Table 3.
Word Mode
Word
A1
A0
Double Word 0
0
0
Double Word 1
0
1
Double Word 2
1
0
Double Word 3
1
1
Word
A1
A0
A-1
Word 0
0
0
0
Word 1
0
0
1
Word 2
0
1
0
Word 3
0
1
1
Word 4
1
0
0
Word 5
1
0
1
Word 6
1
1
0
Word 7
1
1
1
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