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參數(shù)資料
| 型號(hào)： | AM29PL320DB70R |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit/1 M x 32-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| 中文描述： | 32兆位（2米× 16位/ 1個(gè)M × 32位）的CMOS 3.0伏，不僅具備高性能頁面模式閃存 |
| 文件頁數(shù)： | 25/50頁 |
| 文件大?。?/td> | 947K |
| 代理商： | AM29PL320DB70R |
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October 2, 2003
Am29PL320D
23
suspends” all sectors selected for erasure.) Note that
unlock bypass programming is not allowed when the
device is erase-suspended.
Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data
within non-suspended sectors. The system can deter-
mine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard
program operation. See “Write Operation Status” for
more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase sus-
pend mode and continue the sector erase operation.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the device has resumed erasing.
Notes:
1. See Table 13 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 3.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
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