參數(shù)資料
型號: AM29PL160CB-90
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
中文描述: 16兆位(2米× 8位/ 1個M x 16位)的CMOS 3.0伏,不僅具備高性能頁面模式閃存
文件頁數(shù): 2/44頁
文件大?。?/td> 987K
代理商: AM29PL160CB-90
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
22143
Issue Date:
June 12, 2002
Rev:
C
Amendment/
+4
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29PL160C
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
16 Mbit Page Mode device
— Byte (8-bit) or word (16-bit) mode selectable via
BYTE# pin
— Page size of 16 bytes/8 words: Fast page read
access from random locations within the page
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
5 V-tolerant data, address, and control signals
High performance read access times
— Page access times as fast as 25 ns at industrial
temperature range
— Random access times as fast as 65 ns
Power consumption (typical values at 5 MHz)
— 30 mA read current
— 20 mA program/erase current
— 1 μA standby mode current
— 1 μA Automatic Sleep mode current
Flexible sector architecture
— Sector sizes: One 16 Kbyte, two 8 Kbyte, one
224 Kbyte, and seven sectors of 256 Kbytes
each
— Supports full chip erase
Bottom boot block configuration only
Sector Protection
— A hardware method of locking a sector to prevent
any program or erase operations within that
sector
— Sectors can be locked via programming
equipment
— Temporary Sector Unprotect command
sequence allows code changes in previously
locked sectors
Minimum 1 million write cycles guarantee
per sector
20-year data retention
Manufactured on 0.32 μm process technology
Software command-set compatible with JEDEC
standard
— Backward compatible with Am29F and Am29LV
families
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
Package Options
— 44-pin SO (mask-ROM compatible pinout)
— 48-pin TSOP
相關(guān)PDF資料
PDF描述
AM29PL160CB90SKI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
AM29SL160CB-100WCIN 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160C 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
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AM29PL160CB-90SF 制造商:Advanced Micro Devices 功能描述:
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AM29SL160CT-100EIN 制造商:Advanced Micro Devices 功能描述:
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