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參數(shù)資料
| 型號： | AM29PDL310G98WHIN |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 64兆位（4個M x 16位），3.0伏的CMOS只，同步讀/寫閃存與增強VersatileIO控制記憶 |
| 文件頁數(shù)： | 27/61頁 |
| 文件大?。?/td> | 1653K |
| 代理商： | AM29PDL310G98WHIN |
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26
Am29PDL640G
February 26, 2003
P R E L I M I N A R Y
Table 12.
Device Geometry Definition
Addresses
Data
Description
27h
0017h
Device Size = 2
N
byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
007Dh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
相關PDF資料 |
PDF描述 |
|---|---|
| AM29PDL310G98WSI | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL310G98WSIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL310G63WHI | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL310G63WHIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL310G63WSI | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
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