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參數(shù)資料
| 型號： | AM29PDL310G73WSI |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 64兆位（4個M x 16位），3.0伏的CMOS只，同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁數(shù)： | 43/61頁 |
| 文件大?。?/td> | 1653K |
| 代理商： | AM29PDL310G73WSI |
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42
Am29PDL640G
February 26, 2003
P R E L I M I N A R Y
TEST CONDITIONS
Table 17.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.0 V
Device
Under
Test
Note:
Diodes are IN3064 or equivalent
Figure 10.
Test Setup
Test Condition
63, 98
73, 83
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
70
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 11.
Input Waveforms and Measurement Levels
相關(guān)PDF資料 |
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| AM29PDL310G73WSIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL310G83WHI | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL310G83WHIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL310G83WSI | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL310G83WSIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
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