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參數資料
| 型號： | AM29PDL310G73WHIN |
| 廠商： | Spansion Inc. |
| 英文描述： | CAP 0.022UF 50V 5% X7R SMD-0603 TR-7 PLATED-NI/SN |
| 中文描述： | 64兆位（4個M x 16位），3.0伏的CMOS只，同步讀/寫閃存與增強VersatileIO控制記憶 |
| 文件頁數： | 42/61頁 |
| 文件大?。?/td> | 1653K |
| 代理商： | AM29PDL310G73WHIN |
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February 26, 2003
Am29PDL640G
41
P R E L I M I N A R Y
DC CHARACTERISTICS
CMOS Compatible
Notes:
1.
The I
CC
current listed is typically less than 2 mA/MHz, with OE# at
V
IH
.
Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
I
active while Embedded Erase or Embedded Program is in
progress.
2.
3.
4.
Automatic sleep mode enables the low power mode when
addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode
current is 200 nA.
Not 100% tested.
5.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, OE#, RESET# Input Load Current
V
CC
= V
CC max
; V
ID
= 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, OE# = V
IH
V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current (Notes 1, 2)
CE# = V
IL
,
OE# = V
IH
, V
CC
= V
CC max
5 MHz
10
20
mA
10 MHz
25
45
I
CC2
V
CC
Active Write Current (Notes 2, 3)
CE# = V
IL
,
OE# = V
IH
, WE# = V
IL
15
30
mA
I
CC3
V
CC
Standby Current (Note 2)
CE#, RESET#, WP#/ACC = V
IO
±
0.3 V
1
5
μA
I
CC4
V
CC
Reset Current (Note 2)
RESET# = V
SS
±
0.3 V
V
IH
= V
IO
±
0.3 V;
V
IL
= V
SS
±
0.3 V
1
5
μA
I
CC5
Automatic Sleep Mode (Notes 2, 4)
1
5
μA
I
CC6
V
Active Read-While-Program Current
(Notes 1, 2)
CE# = V
IL
,
OE# = V
IH
Word
21
45
mA
I
CC7
V
Active Read-While-Erase Current
(Notes 1, 2)
CE# = V
IL
, OE# = V
IH
Word
21
45
mA
I
CC8
V
CC
Active Program-While-Erase-
Suspended Current (Notes 2, 5)
CE# = V
IL
, OE# = V
IH
17
35
mA
V
IL
Input Low Voltage
V
IO
= 1.65–1.95 V
V
IO
= 2.7–3.1 V
V
IO
= 1.65–1.95 V
–0.4
0.4
V
–0.5
0.8
V
V
IH
Input High Voltage
V
IO
–0.4
V
IO
+0.4
V
V
IO
= 2.7–3.1 V
2
V
CC
+0.3
V
V
HH
Voltage for ACC Program Acceleration
V
CC
= 3.0 V ± 10%
8.5
9.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 3.0 V
±
10%
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 100 μA, V
CC
= V
CC min
, V
IO
= 1.65–1.95 V
I
OL
= 4.0 mA, V
CC
= V
CC min
, V
IO
= 2.7–3.1 V
I
OH
= –100 μA, V
CC
= V
CC min
,
V
IO
= 1.65–1.95 V
I
OH
= –2.0 mA, V
CC
= V
CC min
, V
IO
= 2.7–3.1 V
0.1
V
0.4
V
V
OH
Output High Voltage
V
IO
–0.1
V
2.4
V
V
LKO
Low V
CC
Lock-Out Voltage (Note 5)
2.3
2.5
V
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| AM29PDL310G73WSI | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| AM29PDL310G73WSIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
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| AM29PDL310G83WSI | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
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