參數(shù)資料
型號(hào): AM29PDL310G63WSIN
廠商: Spansion Inc.
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述: 64兆位(4個(gè)M x 16位),3.0伏的CMOS只,同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶
文件頁(yè)數(shù): 55/61頁(yè)
文件大?。?/td> 1653K
代理商: AM29PDL310G63WSIN
54
Am29PDL640G
February 26, 2003
P R E L I M I N A R Y
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
4. Waveforms are for the word mode.
Figure 24.
Alternate CE# Controlled Write (Erase/Program) Operation Timings
相關(guān)PDF資料
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AM29PDL310G73WSI 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
AM29PDL310G73WSIN 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
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