參數(shù)資料
型號(hào): AM29N323D
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 32兆位(2米× 16位)的CMOS 1.8伏,只有同時(shí)讀/寫(xiě),突發(fā)模式閃存
文件頁(yè)數(shù): 30/48頁(yè)
文件大?。?/td> 824K
代理商: AM29N323D
August 8, 2002
Am29N323D
29
AC CHARACTERISTICS
Asynchronous Read
Note:
Not 100% tested.
Note:
RA = Read Address, RD = Read Data.
Figure 10.
Asynchronous Mode Read
Parameter
Description
11A
Unit
JEDEC
Standard
t
CE
Access Time from CE# Low
Max
110
ns
t
ACC
Asynchronous Access Time
Max
110
ns
t
AVDP
AVD# Low Time
Min
12
ns
t
AAVDS
Address Setup Time to Falling Edge of AVD
Min
5
ns
t
AAVDH
Address Hold Time from Rising Edge of AVD
Min
7
ns
t
OE
Output Enable to Output Valid
Max
35
ns
t
OEH
Output Enable Hold Time
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
OEZ
Output Enable to High Z (See Note)
Max
20
ns
t
CE
WE#
A16
-
A21
CE#
OE#
Valid RD
t
ACC
t
OEH
t
OE
A/DQ0:
A/DQ15
t
OEZ
t
AAVDH
t
AVDP
t
AAVDS
AVD#
RA
RA
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