參數(shù)資料
型號： AM29LV800DT-90WCI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝： 6.15 X 8.15 MM, 0.80 MM PITCH, FBGA-48
文件頁數(shù)： 9/51頁
文件大?。?/td> 1628K
代理商： AM29LV800DT-90WCI
January 21, 2005 Am29LV800D_00_A4_E
Am29LV800D
7
P R E L I M I N A R Y
Special Handling Instructions for FBGA
Package
Special handling is required for Flash Memory
products in FBGA packages.
Flash memory devices in FBGA packages may
be damaged if exposed to ultrasonic cleaning
methods. The package and/or data integrity
may be compromised if the package body is
exposed to temperatures above 150
°
C for pro-
longed periods of time.
Pin Configuration
A0–A18
= 19 addresses
DQ0–DQ14= 15 data inputs/outputs
DQ15/A-1 = DQ15 (data input/output, word
mode),
A-1 (LSB address input, byte
mode)
BYTE#
= Selects 8-bit or 16-bit mode
CE#
= Chip enable
OE#
= Output enable
WE#
= Write enable
RESET#
= Hardware reset pin, active low
RY/BY#
= Ready/Busy# output
V
CC
= 3.0 volt-only single power supply
(see Product Selector Guide for
speed
options and voltage supply
tolerances)
V
SS
NC
= Device ground
= Pin not connected internally
Logic Symbol
19
16 or 8
DQ0–DQ15
(A-1)
A0–A18
CE#
OE#
WE#
RESET
BYTE#
RY/BY#
相關(guān)PDF資料
PDF描述
AM29LV800DT-120ED Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
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Am29PDS322DT10 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
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