參數(shù)資料
型號： AM29LV800BT120EI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： RP10 (EW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 12V; 4:1 Wide Input Voltage Range; 10 Watts Output Power; 1.6kVDC Isolation; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 84%
中文描述： 512K X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝： MO-142DD, TSOP-48
文件頁數(shù)： 29/42頁
文件大?。?/td> 569K
代理商： AM29LV800BT120EI
Am29LV800B
29
P R E L I M I N A R Y
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
70R
80
90
120
JEDEC
Std
Description
Unit
t
ELFL/
t
ELFH
CE# to BYTE# Switching Low or High
Max
5
ns
t
FLQZ
BYTE# Switching Low to Output HIGH Z
Max
25
25
30
30
ns
t
FHQV
BYTE# Switching High to Output Active
Min
70
80
90
120
ns
DQ15
Output
Data Output
(DQ0–DQ7)
CE#
OE#
BYTE#
t
ELFL
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
t
FLQZ
BYTE#
Switching
from word
to byte
mode
DQ15
Output
Data Output
(DQ0–DQ7)
BYTE#
t
ELFH
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
t
FHQV
BYTE#
Switching
from byte
to word
mode
21490E-19
Figure 15.
BYTE# Timings for Read Operations
Note:
Refer to the Erase/Program Operations table for t
AS
and t
AH
specifications.
21490E-20
Figure 16.
BYTE# Timings for Write Operations
CE#
WE#
BYTE#
The falling edge of the last WE# signal
t
HOLD
(t
AH
)
t
SET
(t
AS
)
相關PDF資料
PDF描述
AM29LV800BB70RFE 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800BB70RFI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV800BB70RSCB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800BB70RSE Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 15pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
AM29LV800BB70RSI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
AM29LV800BT-120EI 制造商:Advanced Micro Devices 功能描述:
AM29LV800BT-120SCT 制造商:Advanced Micro Devices 功能描述:
AM29LV800BT-90EC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP 制造商:Analog Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP
AM29LV800DB-70EF 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 70ns 48-Pin TSOP
AM29LV800DB-90EC 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*