參數(shù)資料
    型號(hào): AM29LV800BB90WBCB
    廠商: ADVANCED MICRO DEVICES INC
    元件分類: PROM
    英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
    中文描述: 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
    封裝: 6 X 9 MM, 0.80 MM PITCH, FBGA-48
    文件頁(yè)數(shù): 1/42頁(yè)
    文件大?。?/td> 569K
    代理商: AM29LV800BB90WBCB
    PRELIMINARY
    This document contains information on a product under development at Advanced Micro Devices. The information
    is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
    product without notice.
    Refer to AMD’s Website (www.amd.com) for the latest information.
    Publication#
    21490
    Issue Date:
    March 1998
    Rev:
    E
    Amendment/
    +1
    Am29LV800B
    8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
    CMOS 3.0 Volt-only Boot Sector Flash Memory
    DISTINCTIVE CHARACTERISTICS
    I
    Single power supply operation
    — Full voltage range: 2.7 to 3.6 volt read and write
    operations for battery-powered applications
    — Regulated voltage range: 3.0 to 3.6 volt read
    and write operations and for compatibility with
    high performance 3.3 volt microprocessors
    I
    Manufactured on 0.35 μm process technology
    — Compatible with 0.5 μm Am29LV800 device
    I
    High performance
    — Full voltage range: access times as fast as 80 ns
    — Regulated voltage range: access times as fast
    as 70 ns
    I
    Ultra low power consumption (typical values at
    5 MHz)
    — 200 nA Automatic Sleep mode current
    — 200 nA standby mode current
    — 7 mA read current
    — 15 mA program/erase current
    I
    Flexible sector architecture
    — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
    fifteen 64 Kbyte sectors (byte mode)
    — One 8 Kword, two 4 Kword, one 16 Kword, and
    fifteen 32 Kword sectors (word mode)
    — Supports full chip erase
    — Sector Protection features:
    A hardware method of locking a sector to
    prevent any program or erase operations within
    that sector
    Sectors can be locked in-system or via
    programming equipment
    Temporary Sector Unprotect feature allows code
    changes in previously locked sectors
    I
    Unlock Bypass Program Command
    — Reduces overall programming time when
    issuing multiple program command sequences
    I
    Top or bottom boot block configurations
    available
    I
    Embedded Algorithms
    — Embedded Erase algorithm automatically
    preprograms and erases the entire chip or any
    combination of designated sectors
    — Embedded Program algorithm automatically
    writes and verifies data at specified addresses
    I
    Minimum 1,000,000 write cycle guarantee per
    sector
    I
    Package option
    — 48-ball FBGA
    — 48-pin TSOP
    — 44-pin SO
    I
    Compatibility with JEDEC standards
    — Pinout and software compatible with single-
    power supply Flash
    — Superior inadvertent write protection
    I
    Data# Polling and toggle bits
    — Provides a software method of detecting
    program or erase operation completion
    I
    Ready/Busy# pin (RY/BY#)
    — Provides a hardware method of detecting
    program or erase cycle completion
    I
    Erase Suspend/Erase Resume
    — Suspends an erase operation to read data from,
    or program data to, a sector that is not being
    erased, then resumes the erase operation
    I
    Hardware reset pin (RESET#)
    — Hardware method to reset the device to reading
    array data
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