參數(shù)資料
型號： Am29LV800BB70RSCB
廠商： Advanced Micro Devices, Inc.
英文描述： 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導扇區(qū)閃存
文件頁數(shù)： 42/42頁
文件大?。?/td> 569K
代理商： AM29LV800BB70RSCB
42
Am29LV800B
P R E L I M I N A R Y
REVISION SUMMARY FOR AM29LV800B
Revision E
Distinctive Characteristics
Changed typical read and program/erase current spec-
ifications.
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Figure 1, In-System Sector Protect/Unprotect
Algorithm
Corrected A6 to 0, Changed wait specification to 150
μ
s on sector protect and 15 ms on sector unprotect.
DC Characteristics
Changed typical read and program/erase current spec-
ifications.
AC Characteristics
Alternate CE# Controlled Erase/Program Operations:
Changed t
CP
to 35 ns for 70R, 80, and 90 speed
options.
Erase and Programming Performance
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Physical Dimensions
Corrected dimensions for package length and width in
FBGA illustration (standalone data sheet version).
Revision E+1
Figure 2, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor” back to setting up the next sector address.
DC Characteristics
Changed Note 1 to indicate that OE# is at V
IH
for the
listed current.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations:
Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Corrected the note reference for t
VCS
.
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Figure 23, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cy-
cles.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關PDF資料
PDF描述
AM29LV800BB70RSE Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 15pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
AM29LV800BB70RSI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800BB70RWBC 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV800BB70RWBE 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV800BB70RWBI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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