參數(shù)資料
型號： AM29LV800BB120EEB
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 512K X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝： MO-142DD, TSOP-48
文件頁數(shù)： 42/42頁
文件大?。?/td> 569K
代理商： AM29LV800BB120EEB
42
Am29LV800B
P R E L I M I N A R Y
REVISION SUMMARY FOR AM29LV800B
Revision E
Distinctive Characteristics
Changed typical read and program/erase current spec-
ifications.
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Figure 1, In-System Sector Protect/Unprotect
Algorithm
Corrected A6 to 0, Changed wait specification to 150
μ
s on sector protect and 15 ms on sector unprotect.
DC Characteristics
Changed typical read and program/erase current spec-
ifications.
AC Characteristics
Alternate CE# Controlled Erase/Program Operations:
Changed t
CP
to 35 ns for 70R, 80, and 90 speed
options.
Erase and Programming Performance
Device now has a guaranteed minimum endurance of
1,000,000 write cycles.
Physical Dimensions
Corrected dimensions for package length and width in
FBGA illustration (standalone data sheet version).
Revision E+1
Figure 2, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor” back to setting up the next sector address.
DC Characteristics
Changed Note 1 to indicate that OE# is at V
IH
for the
listed current.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations:
Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Corrected the note reference for t
VCS
.
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Figure 23, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cy-
cles.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV800BB-120EI 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP
AM29LV800BB-90DPI\\1 制造商:Spansion 功能描述:AM29LV800BB-90DPI\\1 - Gel-pak, waffle pack, wafer, diced wafer on film
AM29LV800BB-90DPI\1 制造商:Spansion 功能描述:AM29LV800BB-90DPI\1 - Gel-pak, waffle pack, wafer, diced wafer on film
AM29LV800BB-90EC 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3.3V 8M-Bit 1M x 8/512K x 16 90ns 48-Pin TSOP 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP
AM29LV800BB90EI 制造商:Advanced Micro Devices 功能描述:
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