- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366520 > Am29LV642DU90R (Advanced Micro Devices, Inc.) 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control PDF資料下載
參數(shù)資料
| 型號： | Am29LV642DU90R |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 128兆位（8米× 16位）的CMOS 3.0伏特，只有統(tǒng)一閃存部門與VersatileI / O控制 |
| 文件頁數(shù)： | 2/53頁 |
| 文件大?。?/td> | 986K |
| 代理商： | AM29LV642DU90R |
第1頁當(dāng)前第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
PRELIMINARY
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
25022
Issue Date:
August 14, 2001
Rev:
A
Amendment/
0
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV642D
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
Control
DISTINCTIVE CHARACTERISTICS
I
Two 64 Megabit (Am29LV640D) in a single 64-ball 13
x 11 mm Fortified BGA package (Note: Features will
be described for each internal Am29LV640D)
I
Two Chip Enable pins
—
Two CE# pins to control selection of each internal
Am29LV640D devices
I
Single power supply operation
—
3.0 to 3.6 volt read, erase, and program operations
I
VersatileI/O
control
—
Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the V
IO
pin
I
High performance
—
Access times as fast as 90 ns
I
Manufactured on 0.23 μm process technology
I
CFI (Common Flash Interface) compliant
—
Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
I
Ultra low power consumption (typical values at 3.0 V,
5 MHz) for the part
—
9 mA typical active read current
—
26 mA typical erase/program current
—
400 nA typical standby mode current
I
Flexible sector architecture
—
Two hundred fifty-six 32 Kword sectors
I
Sector Protection
—
A hardware method to lock a sector to prevent
program or erase operations within that sector
—
Sectors can be locked in-system or via programming
equipment
—
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Embedded Algorithms
—
Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
—
Embedded Program algorithm automatically writes
and verifies data at specified addresses
I
Compatibility with JEDEC standards
—
Except for the additional CE2# pin, the Fortified BGA
is pinout and software compatible with single-power
supply Flash
—
Superior inadvertent write protection
I
Minimum 1 million erase cycle guarantee per sector
I
64-ball Fortified BGA Package
I
Erase Suspend/Erase Resume
—
Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
I
Data# Polling and toggle bits
—
Provides a software method of detecting program or
erase operation completion
I
Unlock Bypass Program command
—
Reduces overall programming time when issuing
multiple program command sequences
I
Ready/Busy# pin (RY/BY#)
—
Provides a hardware method of detecting program or
erase cycle completion
I
Hardware reset pin (RESET#)
—
Hardware method to reset the device for reading array
data
I
ACC pin
—
Accelerates programming time for higher throughput
during system production
I
Program and Erase Performance (V
HH
not applied to
the ACC input pin)
—
Word program time: 11 μs typical
—
Sector erase time: 1.6 s typical for each 32 Kword
sector
I
20-year data retention at 125
°
C
—
Reliable operation for the life of the system
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV642DU90RPAE | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV642DU90RPAI | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV652DU120MAE | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control |
| AM29LV652DU120MAF | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control |
| AM29LV652DU120MAI | 128 Megabit (16 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800B-120DGC1 | 制造商:Spansion 功能描述:3V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29LV800BB | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB120EC | 制造商:AMD 功能描述:* |
| AM29LV800BB-120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB-120EI | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 512K x 16, 48 Pin, Plastic, TSSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。