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參數(shù)資料
| 型號(hào)： | AM29LV642DU120PAI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 128兆位（8米× 16位）的CMOS 3.0伏特，只有統(tǒng)一閃存部門與VersatileI /輸出⑩控制 |
| 文件頁(yè)數(shù)： | 26/54頁(yè) |
| 文件大小： | 520K |
| 代理商： | AM29LV642DU120PAI |
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Am29LV642D
25022A2 May 5, 2006
D A T A S H E E T
Table 7. System Interface String
Table 8. Device Geometry Definition
Addresses (x16)
Data
Description
1Bh
0030h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
0004h
Typical timeout per single word write 2
N
μs
20h
0000h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
0005h
Max. timeout for word write 2
N
times typical
24h
0000h
Max. timeout for buffer write 2
N
times typical
25h
0004h
Max. timeout per individual block erase 2
N
times typical
26h
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Addresses (x16)
Data
Description
27h
0017h
Device Size = 2
N
word
28h
29h
0000h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of words in multi-word write = 2
N
(00h = not supported)
2Ch
0001h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
007Fh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
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