- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366518 > Am29LV641DL90RZI (Advanced Micro Devices, Inc.) 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control PDF資料下載
參數(shù)資料
| 型號(hào)： | Am29LV641DL90RZI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| 中文描述： | 64兆位（4個(gè)M x 16位），3.0伏的CMOS只均勻部門閃光控制記憶與VersatileI |
| 文件頁數(shù)： | 32/57頁 |
| 文件大小： | 1001K |
| 代理商： | AM29LV641DL90RZI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁當(dāng)前第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁
September 20, 2002
Am29LV640D/Am29LV641D
31
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, sev-
eral RY/BY# pins can be tied together in parallel with a
pull-up resistor to V
CC
.
If the output is low (Busy), the device is actively eras-
ing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or the device is in the erase-suspend-read
mode.
Table 11 shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or com-
plete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any ad-
dress, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm op-
eration, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors
selected for erasing are protected, DQ6 toggles for approxi-
mately 100 μs, then returns to reading array data. If not all
selected sectors are protected, the Embedded Erase algo-
rithm erases the unprotected sectors, and ignores the se-
lected sectors that are protected.
The system can use DQ6 and DQ2 together to determine
whether a sector is actively erasing or is erase-suspended.
When the device is actively erasing (that is, the Embedded
Erase algorithm is in progress), DQ6 toggles. When the de-
vice enters the Erase Suspend mode, DQ6 stops toggling.
However, the system must also use DQ2 to determine
which sectors are erasing or erase-suspended. Alterna-
tively, the system can use DQ7 (see the subsection on
DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1
μ
s after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Pro-
gram algorithm is complete.
Table 11 shows the outputs for Toggle Bit I on DQ6.
Figure 6 shows the toggle bit algorithm. Figure 19 in
the
“
AC Characteristics
”
section shows the toggle bit
timing diagrams. Figure 20 shows the differences be-
tween DQ2 and DQ6 in graphical form. See also the
subsection on DQ2: Toggle Bit II.
Figure 6.
Toggle Bit Algorithm
START
No
Yes
Yes
DQ5 = 1
No
Yes
Toggle Bit
= Toggle
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Read DQ7
–
DQ0
Toggle Bit
= Toggle
Read DQ7
–
DQ0
Twice
Read DQ7
–
DQ0
Note:
The system should recheck the toggle bit even if
DQ5 =
“
1
”
because the toggle bit may stop toggling as DQ5
changes to
“
1.
”
See the subsections on DQ6 and DQ2 for
more information.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29LV641DU120REIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV641DU120RFE | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV641DU120RFEN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV641DU120RFI | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV641DU120RFIN | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV641ML112REI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV641ML120REI | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 64M-Bit 4M x 16 120ns 48-Pin TSOP |
| AM29LV800B-120DGC1 | 制造商:Spansion 功能描述:3V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29LV800BB | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800BB120EC | 制造商:AMD 功能描述:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。