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參數(shù)資料
| 型號(hào)： | AM29LV640MT110RPCI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類(lèi)： | PROM |
| 英文描述： | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 4M X 16 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64 |
| 文件頁(yè)數(shù)： | 65/66頁(yè) |
| 文件大?。?/td> | 836K |
| 代理商： | AM29LV640MT110RPCI |
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February1,2007 26190C8
Am29LV640MT/B
63
D A T A S H E E T
Word/Byte Configuration
Changed BYTE# Switching Low to Output High Z
Speed Options from 30 ns to 16 ns.
Customer Lockable: Secured Silicon Sector NOT
Programmed or Protected at the factory.
Added second bullet, Secured Silicon sector-protect.
Revision C+1 (February 16, 2003)
Distinctive Characteristics
Corrected performance characteristics.
Product Selector Guide
Added note 2.
Connection Diagrams
Changed pin F1 to NC.
Ordering Information
Corrected Valid Combinations table.
Added Note.
AC Characteristics
Removed 93, 93R speed option.
Added Note
Input values in the t
WHWH
1 and t
WHWH
2 parameters in
the Erase and Program Options table that were previ-
ously TBD. Also, added note 5.
Input values in the t
WHWH
1 and t
WHWH
2 parameters in
the Alternate CE# Controlled Erase and Program Op-
tions table that were previously TBD. Also, added note
5.
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 3 and 4
Revision C+2 (June 12, 2003)
Ordering Information
Added 90R speed grade.
Erase and Programming Performance
Modified table and notes, inserted values for Typical.
Revision C+3 (February 12, 2004)
Erase Suspend/Erase Resume Commands
Added note reference to erase operation.
Table 12
&
Table 13
: Command Definitions
Modified the Addr information for both Program/Erase
Suspend and Program/Erase Resume from BA to
XXX.
AC Characteristics - Erase and Program
Operations, and Alternate CE# Controlled Erase
and Program Operations
Added t
POLL
information.
AC Characteristics Figures - Program Operation
Timings, Data# Polling Timings (During Embedded
Algorithms, and Alternate CE# Controlled Write
(Erase/Program) Operation Timings
Updated figures with t
POLL
information.
Revision C+4 (August 19, 2004)
Added Max programming specifications.
Cover sheet and Title page
Added notation referencing superseding documenta-
tion.
Revision C+5 (November5, 2004)
Ordering Information and Valid Combinations
Added Pb-Free options
Revision C+6 (December 7, 2004)
Coversheet and Title page
Added notation referencing superseding documenta-
tion.
Revision C+7 (December 13, 2005)
Global
This product has been retired and is not available for
designs. For new and current designs, S29GL064A
supersedes Am29LV640MT/B and is the factory-rec-
ommended migration path. Please refer to the
S29GL064A datasheet for specifications and ordering
information. Availability of this document is retained for
reference and historical purposes only.
Revision C8 (February 1, 2007)
Global
Changed SecSi Sector to Secured Silicon Sector.
AC Characteristics
Erase and Program Operations table:
Changed t
BUSY
to a maximum specification.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV640MT110RWHF | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MT110RWHI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MT110WHF | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MT110WHI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MT120EF | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV640MU101RPCI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640MU90NI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640MU90RPC1 | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640MU90RPCI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV641DH120REF | 制造商:Spansion 功能描述:Flash Memory IC |
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