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參數(shù)資料
| 型號： | AM29LV640ML112REI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 4M X 16 FLASH 3V PROM, 110 ns, PDSO56 |
| 封裝： | MO-142, TSOP-56 |
| 文件頁數(shù)： | 58/62頁 |
| 文件大?。?/td> | 602K |
| 代理商： | AM29LV640ML112REI |
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56
Am29LV640MH/L
December 14, 2005
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following
conditions: 25
°
C, 3.0 V V
CC
. Programming specifications
assume that all bits are programmed to 00h.
2. Maximum values are measured at V
CC
= 3.0 V, worst case
temperature. Maximum values are valid up to and including
100,000 program/erase cycles.
3. Word/Byte programming specification is based upon a
single word/byte programming operation not utilizing the
write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write
buffer programming operation.
LATCHUP CHARACTERISTICS
5. Effective write buffer specification is calculated on a
per-word/per-byte basis for a 16-word/32-byte write buffer
operation.
6. In the pre-programming step of the Embedded Erase
algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the
command sequence(s) for the program command. See
Tables
8
and
9
for further information on command
definitions.
8. The device has a minimum erase and program cycle
endurance of 100,000 cycles.
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP PIN AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Sector Erase Time
Typ (Note 1)
0.5
Max (Note 2)
15
Unit
sec
Comments
Excludes 00h
programming prior to
erasure (Note 6)
Chip Erase Time
64
128
sec
Single Word/Byte Program Time (Note 3)
Byte
Word
Byte
Word
100
100
90
90
352
11
22
800
800
720
720
1800
57
113
μs
μs
μs
μs
μs
μs
μs
Excludes system level
overhead (Note 7)
Accelerated Single Word/Byte Program Time
(Note 3)
Total Write Buffer Program Time (Note 4)
Effective Write Buffer Program Time (Note 5)
Per Byte
Per Word
Total Accelerated Effective Write Buffer
Program Time (Note 4)
Effective Accelerated Write Buffer Program
Time (Note 4)
Chip Program Time, using the Write Buffer
282
1560
μs
Per Byte
Per Word
8.8
17.6
92
49
98
170
μs
μs
sec
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
Input voltage with respect to V
SS
on all I/O pins
V
CC
Current
–1.0 V
12.5 V
–1.0 V
–100 mA
V
CC
+ 1.0 V
+100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
6
4.2
8.5
5.4
7.5
3.9
Max
7.5
5.0
12
6.5
9
4.7
Unit
pF
pF
pF
pF
pF
pF
C
IN
Input Capacitance
V
IN
= 0
TSOP
Fine-pitch BGA
TSOP
Fine-pitch BGA
TSOP
Fine-pitch BGA
C
OUT
Output Capacitance
V
OUT
= 0
C
IN2
Control Pin Capacitance
V
IN
= 0
Parameter Description
Test Conditions
150
°
C
125
°
C
Min
10
20
Unit
Years
Years
Minimum Pattern Data Retention Time
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