參數(shù)資料
型號(hào): Am29LV400T-100EIB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 21/40頁(yè)
文件大?。?/td> 516K
代理商: AM29LV400T-100EIB
21
Am29LV400
P R E L I M I N A R Y
Table 6.
Write Operation Status
Notes:
1.
DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
Operation
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/BY#
Standard
Mode
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Erase
Suspend
Mode
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Reading within Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
0
相關(guān)PDF資料
PDF描述
AM29LV400B-120EI Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 2700pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-20%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: Z5U; Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500
AM29LV400 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV400B-100SEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV400B-100SI 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV400B-100SIB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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