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參數(shù)資料
| 型號(hào)： | AM29LV320MT90RWC |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 32兆位（2米× 16位/ 4米× 8位）的MirrorBit 3.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 60/61頁(yè) |
| 文件大小： | 1395K |
| 代理商： | AM29LV320MT90RWC |
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60
Am29LV320MT/B
May 16, 2003
D A T A S H E E T
Erase and Programming Performance
Changed the typicals and/or maximums of the Chip
Erase Time, Effective Write Buffer Program Time,
Byte/Word Program Time, and Accelerated Effective
Program Time to TBD.
Revision A+4 (February 16, 2003)
Distinctive Characteristics
Corrected performance characteristics.
Product Selector Guide
Added note 2.
Ordering Information
Corrected Valid Combinations table.
Added Note.
AC Characteristics
Input values in the t
WHWH
1 and t
WHWH
2 parameters in
the Erase and Program Options table that were previ-
ously TBD. Also, added note 5.
Input values in the t
WHWH
1 and t
WHWH
2 parameters in
the Alternate CE# Controlled Erase and Program Op-
tions table that were previously TBD. Also, added note
5.
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 3 and 4
Revision B (May 16, 2003)
Distinctive Characteristics
Added typical active read current
Global
Converted to full datasheet version.
Modified SecSi Sector Flash Memory Region section
to include ESN references.
CMOS Compatible
Corrected Typ and Max values for the I
CC 1, 2, and 3
.
Erase and Program Operations and Alternate CE#
Controlled Erase and Program Operations
Changed Accelerated Effective Write Buffer Program
Operation value.
Erase and Programming Performance
Input values into table that were previously TBD.
Modified notes.
Removed Word references.
Trademarks
Copyright 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV320MB100E | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MB100EI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MT100PC | CAP 0.047UF 50V 50V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 |
| AM29LV320MT100PCI | CAP 0.1UF 50V 50V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 STANDOFF |
| AM29LV320MT100RE | CAP 2200PF 100V 100V X7R RAD.20 .20X.20 BULK R-MIL-PRF-39014 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV320MT90RWCI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 48FBGA - Trays |
| AM29LV400BB-120EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8/256K x 16 120ns 48-Pin TSOP |
| AM29LV400BB-120EI | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 120ns 48-Pin TSOP |
| AM29LV400BB-120SC | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 120ns 44-Pin SOP |
| AM29LV400BB-120WAI | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8/256K x 16 120ns 48-Pin FBGA |
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