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參數(shù)資料
| 型號(hào)： | AM29LV320MT120RPC |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 32兆位（2米× 16位/ 4米× 8位）的MirrorBit 3.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁(yè)數(shù)： | 44/61頁(yè) |
| 文件大小： | 1395K |
| 代理商： | AM29LV320MT120RPC |
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44
Am29LV320MT/B
May 16, 2003
D A T A S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words (or 1–32 bytes) programmed.
4. Effective write buffer specification is based upon a 16-word (or 32-byte) write buffer operation.
5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
Parameter
Speed Options
JEDEC
Std.
Description
90R
100,
100R
110,
110R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
7.5
μs
Per Word
Typ
15
μs
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Byte
Typ
6.25
μs
Per Word
Typ
12.5
μs
Single Word/Byte Program
Operation (Note 2, 5)
Byte
Typ
60
μs
Word
60
μs
Accelerated Single Word/Byte
Programming Operation (Note 2, 5)
Byte
Typ
54
μs
Word
54
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
BUSY
WE# to RY/BY#
Min
90
100
110
120
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV320MB120RPC | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MT90RWCI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MB90RWCI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MT100RWCI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MB100RWCI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV320MT90RPCI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 64BGA - Trays |
| AM29LV320MT90RWCI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 48FBGA - Trays |
| AM29LV400BB-120EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8/256K x 16 120ns 48-Pin TSOP |
| AM29LV400BB-120EI | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 120ns 48-Pin TSOP |
| AM29LV400BB-120SC | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 120ns 44-Pin SOP |
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