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| 型號： | AM29LV320MT110RPC |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | TVS 5.6V 0.1J 18V-CV SMD-0805 SN100 TR-7-PL |
| 中文描述： | 32兆位（2米× 16位/ 4米× 8位）的MirrorBit 3.0伏，只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 53/61頁 |
| 文件大小： | 1395K |
| 代理商： | AM29LV320MT110RPC |
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May 16, 2003
Am29LV320MT/B
53
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, Programming specification assume that
all bits are programmed to 00h.
2. Maximum values are measured at V
CC
= 3.0, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence (s) for the program command. See Tables 12 and
13 for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming
prior to erasure (Note 6)
Chip Erase Time
32
64
sec
Single Word/Byte Program Time (Note 3)
Byte
60
600
μs
Excludes system level
overhead (Note 7)
Word
60
600
μs
Accelerated Single Word/Byte Program Time
(Note 3)
Byte
54
540
μs
Word
54
540
μs
Total Write Buffer Program Time (Note 4)
240
1200
μs
Effective Write Buffer Program Time (Note 5)
Per Byte
7.5
38
μs
Per Word
15
75
μs
Total Accelerated Write Buffer Program Time (Note 4)
200
1040
μs
Effective Accelerated Write Buffer Program Time
(Note 5)
Per Byte
6.25
33
μs
Per Word
12.5
65
μs
Chip Program Time
31.5
73
sec
Description
Min
Max
Input voltage with respect to V
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
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| AM29LV320MT90RPCI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 64BGA - Trays |
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| AM29LV400BB-120EI | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 120ns 48-Pin TSOP |
| AM29LV400BB-120SC | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 120ns 44-Pin SOP |
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