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參數(shù)資料
| 型號： | AM29LV320MT100RPCI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-64 |
| 文件頁數(shù)： | 1/61頁 |
| 文件大?。?/td> | 1395K |
| 代理商： | AM29LV320MT100RPCI |
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DATASHEET
Publication#
26518
Issue Date:
May 16, 2003
Rev:
B
Amendment/
0
Refer to AMD’s Website (www.amd.com) for the latest information.
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Am29LV320MT/B
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit
3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
Single power supply operation
— 3 V for read, erase, and program operations
■
Manufactured on 0.23 μm MirrorBit process
technology
■
SecSi
(Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
■
Flexible sector architecture
— Sixty-three 32 Kword/64-Kbyte sectors
— Eight 4 Kword/8 Kbyte boot sectors
■
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■
Minimum 100,000 erase cycle guarantee per sector
■
20-year data retention at 125
°
C
PERFORMANCE CHARACTERISTICS
■
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 μs typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word/byte updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
■
Low power consumption (typical values at 3.0 V, 5
MHz)
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 μA typical standby mode current
■
Package options
— 48-pin TSOP
— 48-ball Fine-pitch BGA
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
■
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
changing code in locked sectors
— WP#/ACC input:
Write Protect input (WP#) protects top or bottom two
sectors regardless of sector protection settings
ACC (high voltage) accelerates programming time for
higher throughput during system production
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV320MT100RWC | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MT120WC | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MT120WCI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MT90RE | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV320MT90REI | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV320MT90RPCI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 64BGA - Trays |
| AM29LV320MT90RWCI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 48FBGA - Trays |
| AM29LV400BB-120EC | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 4M-Bit 512K x 8/256K x 16 120ns 48-Pin TSOP |
| AM29LV400BB-120EI | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 120ns 48-Pin TSOP |
| AM29LV400BB-120SC | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 4Mbit 512K/256K x 8bit/16bit 120ns 44-Pin SOP |
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