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參數(shù)資料
| 型號(hào)： | AM29LV320MB100RWCI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA48 |
| 封裝： | 9 X 8 MM, 0.80 MM PITCH, FBGA-48 |
| 文件頁(yè)數(shù)： | 52/61頁(yè) |
| 文件大?。?/td> | 1395K |
| 代理商： | AM29LV320MB100RWCI |
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52
Am29LV320MT/B
May 16, 2003
D A T A S H E E T
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
4. Waveforms are for the word mode.
Figure 25.
Alternate CE# Controlled Write (Erase/Program)
Operation Timings
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| AM29LV320ML101EI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 100NS 56TSOP - Trays |
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