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參數(shù)資料
| 型號： | AM29LV256MH128EI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 3V PROM, 120 ns, PDSO56 |
| 封裝： | TSOP-56 |
| 文件頁數(shù)： | 55/63頁 |
| 文件大?。?/td> | 1515K |
| 代理商： | AM29LV256MH128EI |
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September 9, 2002
Am29LV256M
59
A D VA NCE
I N FO RM ATIO N
AC CHARACTERISTICS
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
Description
Min
Max
Input voltage with respect to V
SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA
tGHEL
tWS
OE#
CE#
WE#
RESET#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7#,
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0A0 for program
5555 for erase
tRH
tWHWH1 or 2
RY/BY#
tWH
PD for program
3030 for sector erase
1010 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUSY
DQ15#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 24.
Alternate CE# Controlled Write (Erase/Program)
Operation Timings
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