參數資料
型號: AM29LV2562MH120PII
廠商: Advanced Micro Devices, Inc.
英文描述: 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述: 512兆位(16 M中的x 32-Bit/32 M中的x 16位),3.0伏的MirrorBit⑩只均勻部門閃存記憶體與VersatileI /輸出⑩控制
文件頁數: 34/67頁
文件大?。?/td> 473K
代理商: AM29LV2562MH120PII
32
Am29LV2562M
December 16, 2005
D A T A S H E E T
Table 8.
Device Geometry Definition
Addresses (x16)
Data
Description
27h
00001919h
Device Size = 2
N
byte
28h
29h
00000202h
00000000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
00000505h
00000000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
00000101h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
0101FFFFh
00000101h
00000000h
00000101h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
00000000h
00000000h
00000000h
00000000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
00000000h
00000000h
00000000h
00000000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
00000000h
00000000h
00000000h
00000000h
Erase Block Region 4 Information (refer to CFI publication 100)
相關PDF資料
PDF描述
AM29LV256MH103RPGF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100EF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100EI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100FF 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
AM29LV256MH100FI 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control
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