• 參數(shù)資料
    型號(hào): AM29LV200BT-90SF
    廠商: Advanced Micro Devices, Inc.
    元件分類: FLASH
    英文描述: 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
    中文描述: 2兆位(256Kx8Bit/128Kx16位),3.0伏的CMOS引導(dǎo)扇區(qū)閃存
    文件頁(yè)數(shù): 17/46頁(yè)
    文件大?。?/td> 716K
    代理商: AM29LV200BT-90SF
    October 10, 2006 21521D6
    Am29LV200B
    15
    D AT A S H E E T
    COMMAND DEFINITIONS
    Writing specific address and data commands or
    sequences into the command register initiates device
    operations. Table 5 defines the valid register command
    sequences. Writing
    incorrect
    address and data
    values
    or writing them in the
    improper sequence
    resets the device to reading array data.
    All addresses are latched on the falling edge of WE# or
    CE#, whichever happens later. All data is latched on
    the rising edge of WE# or CE#, whichever happens
    first. Refer to the appropriate timing diagrams in the
    “AC Characteristics” section.
    Reading Array Data
    The device is automatically set to reading array data
    after device power-up. No commands are required to
    retrieve data. The device is also ready to read array
    data after completing an Embedded Program or
    Embedded Erase algorithm.
    After the device accepts an Erase Suspend command,
    the device enters the Erase Suspend mode. The
    system can read array data using the standard read
    timings, except that if it reads at an address within
    erase-suspended sectors, the device outputs status
    data. After completing a programming operation in the
    Erase Suspend mode, the system may once again
    read array data with the same exception. See “Erase
    Suspend/Erase Resume Commands” for more infor-
    mation on this mode.
    The system
    must
    issue the reset command to re-
    enable the device for reading array data if DQ5 goes
    high, or while in the autoselect mode. See the “Reset
    Command” section, next.
    See also “Requirements for Reading Array Data” in the
    “Device Bus Operations” section for more information.
    The Read Operations table provides the read parame-
    ters, and Figure 13 shows the timing diagram.
    Reset Command
    Writing the reset command to the device resets the
    device to reading array data. Address bits are don’t
    care for this command.
    The reset command may be written between the
    sequence cycles in an erase command sequence
    before erasing begins. This resets the device to reading
    array data. Once erasure begins, however, the device
    ignores reset commands until the operation is
    complete.
    The reset command may be written between the
    sequence cycles in a program command sequence
    before programming begins. This resets the device to
    reading array data (also applies to programming in
    Erase Suspend mode). Once programming begins,
    however, the device ignores reset commands until the
    operation is complete.
    The reset command may be written between the
    sequence cycles in an autoselect command sequence.
    Once in the autoselect mode, the reset command
    must
    be written to return to reading array data (also applies
    to autoselect during Erase Suspend).
    If DQ5 goes high during a program or erase operation,
    writing the reset command returns the device to
    reading array data (also applies during Erase
    Suspend).
    Autoselect Command Sequence
    The autoselect command sequence allows the host
    system to access the manufacturer and devices codes,
    and determine whether or not a sector is protected.
    Table 5 shows the address and data requirements. This
    method is an alternative to that shown in Table 4, which
    is intended for PROM programmers and requires V
    ID
    on address bit A9.
    The autoselect command sequence is initiated by
    writing two unlock cycles, followed by the autoselect
    command. The device then enters the autoselect
    mode, and the system may read at any address any
    number of times, without initiating another command
    sequence. A read cycle at address XX00h retrieves the
    manufacturer code. A read cycle at address XX01h in
    word mode (or 02h in byte mode) returns the device
    code. A read cycle containing a sector address (SA)
    and the address 02h in word mode (or 04h in byte
    mode) returns 01h if that sector is protected, or 00h if it
    is unprotected. Refer to Tables 2 and 3 for valid sector
    addresses.
    The system must write the reset command to exit the
    autoselect mode and return to reading array data.
    Word/Byte Program Command Sequence
    The system may program the device by word or byte,
    depending on the state of the BYTE# pin. Program-
    ming is a four-bus-cycle operation. The program
    command sequence is initiated by writing two unlock
    write cycles, followed by the program set-up command.
    The program address and data are written next, which
    in turn initiate the Embedded Program algorithm. The
    system is
    not
    required to provide further controls or tim-
    ings. The device automatically generates the program
    pulses and verifies the programmed cell margin. Table
    5 shows the address and data requirements for the
    byte program command sequence.
    When the Embedded Program algorithm is complete,
    the device then returns to reading array data and
    addresses are no longer latched. The system can
    determine the status of the program operation by using
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